Ukugeleza Kwenqubo Yomshini Wokufaka I-Sputtering

1. I-substrate yokuhlanza ibhomu

1.1) Umshini wokugcwalisa i-sputtering usebenzisa ukukhishwa okukhanyayo ukuhlanza i-substrate.Okusho ukuthi, shaja igesi ye-argon ekamelweni, i-voltage yokukhipha iseduze ne-1000V, Ngemva kokuvula ukunikezwa kwamandla, ukukhishwa okukhanyayo kukhiqizwa, futhi i-substrate ihlanzwa nge-argon ion bombardment.

I-1.2) Emishinini yokufaka i-sputtering ekhiqiza imihlobiso ephezulu kakhulu, ama-titanium ions akhishwa imithombo emincane ye-arc asetshenziselwa ukuhlanza.Umshini wokugcoba we-sputtering ufakwe umthombo omncane we-arc, futhi umfudlana we-titanium ion ku-arc plasma okhiqizwa ukukhishwa komthombo we-arc omncane usetshenziselwa ukubhomba nokuhlanza i-substrate.

2. I-Titanium nitride enamathela

Lapho ufaka amafilimu amancane e-titanium nitride, into okuhloswe ngayo ukuphalaza i-titanium target.Impahla eqondiwe ixhunywe ku-electrode engalungile yokuphakelwa kwamandla kagesi, futhi i-voltage eqondiwe ingu-400 ~ 500V;I-argon flux ilungisiwe, futhi i-vacuum yokulawula ithi (3~8) x10^-1PA.I-substrate ixhunywe ku-electrode engalungile yokunikezwa kwamandla okuchema, ne-voltage engu-100 ~ 200V.

Ngemva kokuvula ukunikezwa kwamandla kwethagethi ye-sputtering titanium, ukuphuma kokukhanya kuyakhiqizwa, futhi ama-argon ions anamandla aphezulu aqhumisa ithagethi yokufafaza, efafaza ama-athomu e-titanium asuka kulokho okuqondiwe.

I-reaction gas nitrogen iyethulwa, futhi ama-athomu e-titanium ne-nitrogen afakwa i-ioni ye-titanium nama-ion e-nitrogen ekamelweni lokumboza.Ngaphansi kokukhangwa kokuchema okungalungile kwenkambu kagesi efakwe ku-substrate, ama-ion e-titanium nama-ion e-nitrogen aphuthuma phezulu kwe-substrate ukuze asebenze ngamakhemikhali futhi afakwe ukuze akhe ungqimba lwefilimu ye-titanium nitride.

3. Khipha i-substrate

Ngemva kokufinyelela ubukhulu befilimu obunqunywe kusengaphambili, cisha ukunikezwa kwamandla kagesi we-sputtering, ukunikezwa kwamandla kwe-substrate bias, kanye nomthombo womoya.Ngemuva kokuthi izinga lokushisa le-substrate lingaphansi kuka-120 ℃, gcwalisa igumbi lokumboza ngomoya bese ukhipha i-substrate.

Lesi sihloko sishicilelwe ngumagnetron sputtering enamathela umenzi womshini– Guangdong Zhenhua.