Inkqubo yoMqukuqelo woMshini wokuTyala weSputtering

1. I-bombardment yokucoca i-substrate

1.1) Umatshini wokugquma usebenzisa ukukhutshwa okukhanyayo ukucoca i-substrate.Oko kukuthi, ukuhlawulisa igesi ye-argon kwigumbi, i-voltage yokukhupha ijikeleze i-1000V, Emva kokukhanyisa umbane, ukukhutshwa okukhanyayo kuveliswa, kwaye i-substrate icocwa nge-argon ion bombardment.

1.2) Kumatshini wokugquma oomatshini abavelisa imihlobiso ephezulu, i-titanium ion ekhutshwa yimithombo encinci ye-arc isetyenziselwa ukucoca.Umatshini wokugquma we-sputtering uxhotyiswe kunye nomthombo omncinci we-arc, kunye ne-titanium ion stream kwi-arc plasma eyenziwa yi-arc encinci yokukhutshwa komthombo isetyenziselwa ukubhobhoza kunye nokucoca i-substrate.

2. Ukwaleka kwe-Titanium nitride

Xa ufaka iifilimu ezicekethekileyo ze-titanium nitride, into ekujoliswe kuyo yokutshiza yithagethi ye-titanium.Izinto ezijoliswe kuzo zixhunyiwe kwi-electrode engalunganga yokunikezelwa kwamandla okutshiza, kwaye i-voltage ekujoliswe kuyo yi-400 ~ 500V;I-argon flux ilungisiwe, kunye ne-vacuum yokulawula (3 ~ 8) x10^-1PA.I-substrate ixhunywe kwi-electrode engalunganga yonikezelo lwamandla olubi, kunye ne-voltage ye-100 ~ 200V.

Emva kokukhanyisa unikezelo lombane lwethagethi ye-sputtering ye-titanium, ukukhutshwa okukhazimlayo kuyenziwa, kwaye i-argon ions ezinamandla amakhulu zibhobhoza i-sputtering target, i-athomu ye-titanium itshiza ukusuka ekujoliswe kuyo.

I-nitrogen yegesi yokusabela iyaziswa, kwaye i-athomu ye-titanium kunye ne-nitrogen i-ionized ibe yi-ion ye-titanium kunye ne-nitrogen ion kwigumbi lokugquma.Ngaphantsi komtsalane wendima yombane engathandekiyo esetyenziswa kwi-substrate, ii-ion ze-titanium kunye ne-nitrogen ion zikhawuleza ukuya kumphezulu we-substrate ukwenzela ukusabela kweekhemikhali kunye nokubekwa ukwenza umaleko wefilimu ye-titanium nitride.

3. Thatha i-substrate

Emva kokufikelela kubukhulu befilimu obumiselwe kwangaphambili, cima umbane wokutshiza, unikezelo lwamandla okuthambekela kwi-substrate, kunye nomthombo womoya.Emva kokuba ubushushu be-substrate bungaphantsi kwe-120 ℃, gcwalisa igumbi lokugquma ngomoya kwaye ukhuphe i-substrate.

Eli nqaku lipapashwe ngumagnetron sputtering umenzi umatshini ukutyabeka– Guangdong Zhenhua.