Kuyerera kweSputtering Containing Machine

1. Nzvimbo yekuchenesa pasi pemvura inoputika

1.1) Muchina wekuputira sputtering unoshandisa glow discharge kuchenesa substrate. Kureva kuti, kuchaja argon gasi mukamuri, discharge voltage inosvika 1000V, Mushure mekubatidza magetsi, glow discharge inogadzirwa, uye substrate inocheneswa ne argon ion bombardment.

1.2) Mumichina yekuputira inoburitsa zvishongo zvepamusoro-soro, maion etitanium anoburitswa nemasosi madiki e-arc anonyanya kushandiswa pakuchenesa. Muchina wekuputira unoburitsa zvidimbu zvidiki zve-arc, uye rwizi rwetitanium ion muplasma ye-arc inoburitswa nemasosi madiki e-arc anoshandiswa kuchenesa substrate.

2. Kuputira titanium nitride

Pakuisa titanium nitride thin films, chinhu chinonyanya kudiwa pakusputter i titanium target. Chinhu chacho chakabatanidzwa ne negative electrode yesimba rekusputter, uye target voltage i400~500V; Argon flux yakamira, uye control vacuum iri (3~8) x10^-1PA. Substrate yakabatana ne electrode isina kunaka yemagetsi e bias, ine voltage ye100 ~ 200V.

Mushure mekubatidza simba rechinhu chinoputira titanium, chiedza chinobuda, uye maaroni eargon ane simba guru anoputira chinhu chinoputira, achiburitsa maatomu etitanium kubva pachinhu chinoputira.

Nitrogen yegesi inogadzirwa nereaction inounzwa, uye maatomu etitanium nenitrogen zvinoiswa maion etitanium nemaion enitrogen mukamuri rekufukidza. Pasi pekukwezvwa kwesimba remagetsi re negative bias rinoshandiswa ku substrate, maion etitanium nemaion enitrogen zvinokurumidza kusvika pamusoro pe substrate kuti zviite reaction yemakemikari uye deposition kuti zvigadzire titanium nitride film layer.

3. Bvisa pasi pevhu

Kana wasvika pakukora kwefirimu kwakatarwa, dzima simba remagetsi rinoputika, simba remagetsi rinobuda muchikamu chepasi, uye mweya unobva. Kana tembiricha yechikamu chepasi yaderera kupfuura 120 ℃, zadza imba yekuputira nemhepo wobvisa chikamu chepasi.

Chinyorwa ichi chakabudiswa namugadziri wemuchina wekugadzira magnetron sputtering coating– Guangdong Zhenhua.