I-Indium tin oxide (i-Indium Tin Oxide, ebizwa ngokuthi i-ITO) iyigebe elikhulu lebhendi, izinto ze-semiconductor ezifakwe kakhulu uhlobo lwe-n, ezinokukhanya okubonakalayo okuphezulu kanye nezici zokumelana okuphansi, ngakho-ke zisetshenziswa kabanzi kumaseli elanga, izibonisi zephaneli ezisicaba, amafasitela e-electrochromic, i-inorganic kanye ne-organic thin-film electroluminescence, ama-laser diode kanye nezitholi ze-ultraviolet kanye namanye amadivayisi e-photovoltaic, njll. Kunezindlela eziningi zokulungiselela amafilimu e-ITO, kufaka phakathi ukufakwa kwe-laser okushukumayo, ukuphalaza, ukufakwa kwe-chemical vapor, ukubola kokushisa kwe-spray, i-sol-gel, ukuhwamuka, njll. Phakathi kwendlela yokuhwamuka, esetshenziswa kakhulu ukuhwamuka kwe-electron beam.
Kunezindlela eziningi zokulungiselela ifilimu ye-ITO, okuhlanganisa ukufakwa kwe-laser okushukunyiswayo, ukubhoboza, ukufakwa komphunga wamakhemikhali, i-spray pyrolysis, i-sol-gel, ukuhwamuka njalo njalo, lapho indlela yokuhwamuka esetshenziswa kakhulu iwukuhwamuka kwe-electron beam. Ukulungiswa kokuhwamuka kwamafilimu e-ITO kuvame ukuba nezindlela ezimbili: eyodwa ukusetshenziswa kwe-high-purity In, Sn alloy njengezinto zomthombo, emoyeni we-oxygen ukuze kuhwamuke ukusabela; eyesibili ukusetshenziswa kwengxube ye-high-purity In2O3:, SnO2 njengezinto zomthombo zokuhwamuka okuqondile. Ukuze kwenziwe ifilimu enokudluliselwa okuphezulu kanye nokumelana okuphansi, ngokuvamile kudinga izinga lokushisa eliphezulu noma isidingo sokufakwa kwefilimu okulandelayo. U-HR Fallah nabanye basebenzise indlela yokuhwamuka kwe-electron beam emazingeni okushisa aphansi ukuze bafake amafilimu amancane e-ITO, ukuze batadishe umphumela wezinga lokufakwa, izinga lokushisa lokunamathisela kanye neminye imingcele yenqubo esakhiweni sefilimu, izakhiwo zikagesi nezokukhanya. Baveze ukuthi ukwehlisa izinga lokufakwa kungakhuphula ukudluliselwa futhi kunciphise ukumelana kwamafilimu akhule ngokushisa okuphansi. Ukudluliselwa kokukhanya okubonakalayo kungaphezu kuka-92%, kanti ukumelana kungu-7X10-4Ωcm. Bafake amafilimu e-ITO akhuliswe ekushiseni kwegumbi ku-350~550℃, bathola ukuthi uma izinga lokushisa lokunamathisela liphakeme, kulapho i-crystalline property yamafilimu e-ITO iba ngcono khona. Ukudluliselwa kokukhanya okubonakalayo kwamafilimu ngemva kokunamathisela ku-550℃ kungu-93%, kanti usayizi wezinhlamvu cishe u-37nm. Indlela esekelwa yi-plasma inganciphisa futhi izinga lokushisa le-substrate ngesikhathi sokwakheka kwefilimu, okuyisici esibaluleke kakhulu ekwakhekeni kwefilimu, kanti ukwakheka kwekristalu nakho kubaluleke kakhulu. Indlela esekelwa yi-plasma inganciphisa izinga lokushisa le-substrate ngesikhathi sokwakheka kwefilimu, kanti ifilimu ye-ITO etholwe ekufakweni kwayo isebenza kahle. Ukumelana kwefilimu ye-ITO elungiselelwe ngu-S. Laux et al. iphansi kakhulu, ingu-5*10-”Ωcm, futhi ukumuncwa kokukhanya ku-550nm kungaphansi kuka-5%, kanti ukumelana kwefilimu kanye ne-bandwidth ye-optical nakho kuyashintshwa ngokushintsha ingcindezi ye-oxygen ngesikhathi sokufakwa.
–Lesi sihloko sikhishwe yi-umenzi womshini wokumboza nge-vacuumI-Guangdong Zhenhua
Isikhathi sokuthunyelwe: Mashi-23-2024