Indium tin oxide (Indium Tin Oxide, hu ua ITO) yog qhov sib txawv dav dav, cov ntaub ntawv semiconductor n-hom doped hnyav, nrog lub teeb pom kev zoo thiab cov yam ntxwv tsis tshua muaj zog, thiab yog li siv dav hauv cov hlwb hnub ci, cov vaj huam sib luag tiaj tus, cov qhov rai electrochromic, cov yeeb yaj kiab inorganic thiab organic nyias-zaj duab xis electroluminescence, laser diodes thiab ultraviolet detectors thiab lwm yam khoom siv photovoltaic, thiab lwm yam. Muaj ntau txoj hauv kev npaj cov yeeb yaj kiab ITO, suav nrog pulsed laser deposition, sputtering, chemical vapor deposition, spray thermal decomposition, sol-gel, evaporation, thiab lwm yam. Ntawm cov txheej txheem evaporation, feem ntau siv yog electron beam evaporation.
Muaj ntau txoj hauv kev los npaj zaj duab xis ITO, suav nrog pulsed laser deposition, sputtering, chemical vapor deposition, spray pyrolysis, sol-gel, evaporation thiab lwm yam, uas feem ntau siv txoj kev evaporation yog electron beam evaporation. Kev npaj evaporation ntawm ITO zaj duab xis feem ntau muaj ob txoj hauv kev: ib qho yog siv cov khoom siv In, Sn alloy siab ua cov khoom siv, hauv huab cua oxygen rau kev ua evaporation; qhov thib ob yog siv cov khoom siv In2O3:, SnO2 siab ua cov khoom siv rau kev evaporation ncaj qha. Yuav kom ua tau zaj duab xis nrog kev xa tawm siab thiab tsis tshua muaj resistivity, feem ntau xav tau qhov kub siab dua lossis xav tau kev annealing tom qab ntawm zaj duab xis. HR Fallah et al. siv txoj kev electron beam evaporation ntawm qhov kub qis los tso ITO zaj duab xis nyias, los kawm txog qhov cuam tshuam ntawm tus nqi deposition, annealing kub thiab lwm yam txheej txheem ntawm cov qauv ntawm zaj duab xis, hluav taws xob thiab kho qhov muag. Lawv taw qhia tias kev txo qis tus nqi deposition tuaj yeem ua rau muaj kev xa tawm ntau dua thiab txo qhov resistivity ntawm cov zaj duab xis qis-kub-loj hlob. Qhov kev xa tawm ntawm lub teeb pom kev zoo yog ntau dua 92%, thiab qhov resistivity yog 7X10-4Ωcm. lawv tau annealed cov yeeb yaj kiab ITO uas loj hlob ntawm chav tsev kub ntawm 350 ~ 550 ℃, thiab pom tias qhov kub siab dua annealing yog, qhov zoo dua qhov crystalline khoom ntawm ITO yeeb yaj kiab. qhov pom kev pom lub teeb transmittance ntawm cov yeeb yaj kiab tom qab annealing ntawm 550 ℃ yog 93%, thiab qhov loj ntawm cov noob yog li 37nm. txoj kev plasma-assisted kuj tseem tuaj yeem txo qhov kub ntawm substrate thaum lub sijhawm tsim zaj duab xis, uas yog qhov tseem ceeb tshaj plaws hauv kev tsim zaj duab xis, thiab crystallinity kuj tseem ceeb tshaj plaws. Txoj kev plasma-assisted kuj tseem tuaj yeem txo qhov kub ntawm substrate thaum lub sijhawm tsim zaj duab xis, thiab zaj duab xis ITO tau los ntawm kev tso tawm muaj kev ua tau zoo. qhov resistivity ntawm ITO zaj duab xis npaj los ntawm S. Laux et al. yog qhov tsawg heev, 5 * 10-”Ωcm, thiab qhov nqus ntawm lub teeb ntawm 550nm yog tsawg dua 5%, thiab qhov resistivity ntawm zaj duab xis thiab qhov optical bandwidth kuj hloov pauv los ntawm kev hloov pauv lub siab oxygen thaum lub sijhawm tso tawm.
– Tsab xov xwm no yog tso tawm los ntawmlub tshuab nqus tsev txheej tshuab chaw tsim khoomGuangdong Zhenhua
Lub sijhawm tshaj tawm: Lub Peb Hlis-23-2024