Hoʻolauna Uhi ʻana o ITO

ʻO ka Indium tin oxide (Indium Tin Oxide, i kapa ʻia ʻo ITO) he ākea ākea o ka band, nā mea semiconductor n-type i hoʻopaʻa nui ʻia, me ka transmittance mālamalama ʻike kiʻekiʻe a me nā ʻano resistivity haʻahaʻa, a no laila ua hoʻohana nui ʻia i nā cell solar, nā hōʻikeʻike panel pālahalaha, nā puka makani electrochromic, ka electroluminescence thin-film inorganic a me organic, nā diodes laser a me nā mea ʻike ultraviolet a me nā mea hana photovoltaic ʻē aʻe, a pēlā aku. Nui nā ʻano hana o ka hoʻomākaukau ʻana i nā kiʻiʻoniʻoni ITO, me ka pulsed laser deposition, sputtering, chemical vapor deposition, spray thermal decomposition, sol-gel, evaporation, a pēlā aku. Ma waena o ke ʻano evaporation, ʻo ka mea maʻamau ka hoʻohana ʻia ʻana o ka electron beam evaporation.

Nui nā ala e hoʻomākaukau ai i ka kiʻiʻoniʻoni ITO, me ka pulsed laser deposition, sputtering, chemical vapor deposition, spray pyrolysis, sol-gel, evaporation a pēlā aku, ʻo ia ke ʻano hoʻoheheʻe maʻamau i hoʻohana ʻia ʻo ia ka electron beam evaporation. ʻElua mau ala no ka hoʻomākaukau ʻana i ka evaporation o nā kiʻiʻoniʻoni ITO: ʻo kekahi ka hoʻohana ʻana i ka In, Sn alloy maʻemaʻe kiʻekiʻe ma ke ʻano he kumu waiwai, i loko o ka lewa oxygen no ka hoʻoheheʻe ʻana o ka hopena; ʻo ka lua ka hoʻohana ʻana i ka hui kiʻekiʻe In2O3:, SnO2 maʻemaʻe ma ke ʻano he kumu waiwai no ka hoʻoheheʻe pololei. I mea e hana ai i ka kiʻiʻoniʻoni me ka transmittance kiʻekiʻe a me ka resistivity haʻahaʻa, pono pinepine ka mahana substrate kiʻekiʻe a i ʻole ka pono no ka annealing ma hope o ka kiʻiʻoniʻoni. Ua hoʻohana ʻo HR Fallah et al. i ke ʻano hoʻoheheʻe electron beam ma nā mahana haʻahaʻa e waiho i nā kiʻiʻoniʻoni lahilahi ITO, e aʻo i ka hopena o ka helu deposition, ka mahana annealing a me nā ʻano hana ʻē aʻe ma ke ʻano o ka kiʻiʻoniʻoni, nā waiwai uila a me nā optical. Ua kuhikuhi lākou e hiki i ka hoʻohaʻahaʻa ʻana i ka helu deposition ke hoʻonui i ka transmittance a hoʻemi i ka resistivity o nā kiʻiʻoniʻoni i ulu ʻia i ka mahana haʻahaʻa. ʻOi aku ka transmittance o ka mālamalama ʻike ʻia ma mua o 92%, a ʻo ka resistivity he 7X10-4Ωcm. Ua hoʻomehana lākou i nā kiʻiʻoniʻoni ITO i ulu ʻia ma ka mahana o ka lumi ma 350 ~ 550 ℃, a ua ʻike ʻia ʻo ke kiʻekiʻe o ka mahana annealing, ʻoi aku ka maikaʻi o ka waiwai crystalline o nā kiʻiʻoniʻoni ITO. ʻO ka transmittance mālamalama ʻike ʻia o nā kiʻiʻoniʻoni ma hope o ka annealing ma 550 ℃ he 93%, a ʻo ka nui o ka palaoa ma kahi o 37nm. Hiki i ke ʻano kōkua plasma ke hoʻemi i ka mahana substrate i ka wā o ka hoʻokumu ʻana o ka kiʻiʻoniʻoni, ʻo ia ka mea nui loa i ka hoʻokumu ʻana o ka kiʻiʻoniʻoni, a ʻo ka crystallinity ka mea nui loa. Hiki i ke ʻano kōkua plasma ke hoʻemi i ka mahana substrate i ka wā o ka hoʻokumu ʻana o ka kiʻiʻoniʻoni, a ʻo ka kiʻiʻoniʻoni ITO i loaʻa mai ka deposition he hana maikaʻi. ʻO ka resistivity o ka kiʻiʻoniʻoni ITO i hoʻomākaukau ʻia e S. Laux et al. he haʻahaʻa loa ia, 5 * 10-”Ωcm, a ʻo ka omo ʻana o ka mālamalama ma 550nm he emi ma mua o 5%, a ua loli pū ka resistivity o ke kiʻiʻoniʻoni a me ka bandwidth optical ma ka hoʻololi ʻana i ke kaomi oxygen i ka wā o ka waiho ʻana.

–Ua hoʻokuʻu ʻia kēia ʻatikala emea hana mīkini uhi hakahakaGuangdong Zhenhua