I-Indium tin oxide (i-Indium Tin Oxide, ebizwa ngokuba yi-ITO) yindawo ebanzi, izixhobo ze-semiconductor ezixutywe kakhulu, ezineempawu zokukhanya ezibonakalayo eziphezulu kunye neempawu zokumelana eziphantsi, kwaye ngaloo ndlela zisetyenziswa kakhulu kwiiseli zelanga, izibonisi zephaneli ezisicaba, iifestile ze-electrochromic, i-inorganic kunye ne-organic thin-film electroluminescence, ii-laser diodes kunye ne-ultraviolet detectors kunye nezinye izixhobo ze-photovoltaic, njl. Kukho iindlela ezininzi zokulungiselela iifilimu ze-ITO, kubandakanya i-pulsed laser deposition, i-sputtering, i-chemical vapor deposition, i-spray thermal decomposition, i-sol-gel, i-evaporation, njl. Phakathi kwendlela ye-evaporation, eyona isetyenziswa kakhulu yi-electron beam evaporation.
Kukho iindlela ezininzi zokulungiselela ifilimu ye-ITO, kuquka ukufakwa kwe-laser eshukumayo, ukutshiza, ukufakwa komphunga wekhemikhali, i-spray pyrolysis, i-sol-gel, ukufuma njalo njalo, apho indlela yokufuma esetyenziswa kakhulu yi-electron beam evaporation. Ukulungiswa kokufuma kweefilimu ze-ITO kudla ngokuba neendlela ezimbini: enye kukusetyenziswa kwe-high-purity In, Sn alloy njengesixhobo somthombo, kwi-oxygen atmosphere yokufuma kwe-reaction; eyesibini kukusetyenziswa komxube we-high-purity In2O3:, SnO2 njengesixhobo somthombo wokufuma ngokuthe ngqo. Ukuze kwenziwe ifilimu enokudluliselwa okuphezulu kunye nokuchasana okuphantsi, ngokubanzi kufuneka ubushushu obuphezulu be-substrate okanye imfuneko yokuchasana okulandelayo kwefilimu. U-HR Fallah et al. basebenzise indlela yokufuma kwe-electron beam kumaqondo obushushu aphantsi ukufaka iifilimu ezincinci ze-ITO, ukufunda isiphumo sesantya sokufumba, ubushushu bokuchasana kunye nezinye iiparameter zenkqubo kwisakhiwo sefilimu, iipropati zombane kunye nezokukhanya. Babonise ukuba ukunciphisa izinga lokufumba kunokunyusa ukufumba kunye nokunciphisa ukuchasana kweefilimu ezikhuliswe kumaqondo obushushu aphantsi. Ukuhanjiswa kokukhanya okubonakalayo kungaphezulu kwe-92%, kwaye ukumelana yi-7X10-4Ωcm. Baye bafaka iifilimu ze-ITO ezikhuliswe kubushushu begumbi kwi-350 ~ 550℃, baza bafumanisa ukuba xa ubushushu bokutsalela buphezulu, kokukhona ipropathi yekristale yeefilimu ze-ITO ingcono. Ukuhanjiswa kokukhanya okubonakalayo kweefilimu emva kokutsalela kwi-550℃ yi-93%, kwaye ubungakanani bengqolowa bumalunga ne-37nm. Indlela encediswa yi-plasma inokunciphisa ubushushu be-substrate ngexesha lokwenziwa kwefilimu, eyona nto ibalulekileyo ekwakhiweni kwefilimu, kwaye i-crystallinity nayo yeyona ibalulekileyo. Indlela encediswa yi-plasma inokunciphisa ubushushu be-substrate ngexesha lokwenziwa kwefilimu, kwaye ifilimu ye-ITO efunyenwe kwi-deposition isebenza kakuhle. Ukumelana kwefilimu ye-ITO elungiselelwe ngu-S. Laux et al. iphantsi kakhulu, i-5*10-”Ωcm, kwaye ukufunxwa kokukhanya kwi-550nm kungaphantsi kwe-5%, kwaye ukumelana kwefilimu kunye ne-bandwidth ye-optical nazo ziyatshintshwa ngokutshintsha uxinzelelo lwe-oksijini ngexesha lokufakwa.
–Eli nqaku likhutshwe nguumenzi womatshini wokugquma nge-vacuumGuangdong Zhenhua
Ixesha leposi: Matshi-23-2024