Indium tin oxide (Indium Tin Oxide, inozivikanwa seITO) igebe rakakura rebhandi, rine zvinhu zve semiconductor zvine doped yakawanda, zvine transmittance yakawanda inooneka uye hunhu hushoma hwe resistivity, uye nekudaro zvinoshandiswa zvakanyanya mumasero ezuva, flat panel displays, electrochromic windows, inorganic uye organic thin-film electroluminescence, laser diodes uye ultraviolet detectors nezvimwe zvishandiso zve photovoltaic, nezvimwewo. Kune nzira dzakawanda dzekugadzirira mafirimu eITO, kusanganisira pulsed laser deposition, sputtering, chemical vapor deposition, spray thermal decomposition, sol-gel, evaporation, nezvimwewo. Pakati penzira ye evaporation, inonyanya kushandiswa i electron beam evaporation.
Kune nzira dzakawanda dzekugadzirira firimu reITO, dzinosanganisira pulsed laser deposition, sputtering, chemical vapor deposition, spray pyrolysis, sol-gel, evaporation nezvimwewo, iyo nzira inonyanya kushandiswa ye evaporation ndeye electron beam evaporation. Kugadzirira evaporation yemafirimu eITO kunowanzova nenzira mbiri: imwe ndeyekushandisa high-purity In, Sn alloy sechinhu chinotangira, mumhepo yeokisijeni ye reaction evaporation; yechipiri ndeyekushandisa high-purity In2O3:, SnO2 musanganiswa sechinhu chinotangira evaporation yakananga. Kuti firimu riite transmittance yakakwira uye resistivity yakaderera, kazhinji zvinoda tembiricha yakakwira ye substrate kana kudiwa kwe annealing inotevera yefirimu. HR Fallah nevamwe vake vakashandisa nzira ye electron beam evaporation patembiricha yakaderera kuisa ma ITO thin films, kudzidza mhedzisiro ye deposition rate, annealing temperature nezvimwe process parameters pachimiro chefirimu, electrical and optical properties. Vakaratidza kuti kudzikisa deposition rate kunogona kuwedzera transmittance uye kuderedza resistivity yemafirimu akakura ari patembiricha yakaderera. Kutapurirana kwechiedza chinoonekwa kunopfuura 92%, uye resistivity i7X10-4Ωcm. Vakatora mafirimu eITO akakura patembiricha yemumba pa350~550℃, uye vakaona kuti tembiricha ye annealing yakakwira, hunhu hwekristaro hwemafirimu eITO huri nani. Kutapurirana kwechiedza chinoonekwa kwemafirimu mushure me annealing pa550℃ i93%, uye saizi yetsanga inenge 37nm. Nzira ye plasma-assisted inogonawo kuderedza tembiricha ye substrate panguva yekuumbwa kwefirimu, inova chinhu chakakosha pakuumbwa kwefirimu, uye crystallinity ndiyo inonyanya kukosha. Nzira ye plasma-assisted inogonawo kuderedza tembiricha ye substrate panguva yekuumbwa kwefirimu, uye firimu reITO rakawanikwa kubva mu deposition rine mashandiro akanaka. Resistivity yefirimu reITO rakagadzirwa naS. Laux et al. yakaderera zvikuru, 5*10-”Ωcm, uye kupinza kwechiedza pa550nm kushoma pane 5%, uye resistivity yefirimu uye optical bandwidth zvinochinjwawo nekuchinja kumanikidzwa kweokisijeni panguva yekuisa.
–Chinyorwa ichi chakaburitswa namugadziri wemuchina wevacuum coatingGuangdong Zhenhua
Nguva yekutumira: Kurume-23-2024