Gabatarwar Shafi na ITO

Indium tin oxide (Indium Tin Oxide, wanda aka fi sani da ITO) wani babban gibin band ne, kayan semiconductor masu ɗauke da sinadarin n-type, tare da babban watsa haske da ake iya gani da kuma ƙarancin juriya, don haka ana amfani da shi sosai a cikin ƙwayoyin hasken rana, nunin faifai mai faɗi, tagogi na electrochromic, inorganic da thin-film electroluminescence, laser diodes da ultraviolet detectors da sauran na'urorin photovoltaic, da sauransu. Akwai hanyoyi da yawa na shirya fina-finan ITO, gami da pulsed laser deposition, sputtering, chemical tururi deposition, feshi thermal decomposition, sol-gel, evaporation, da sauransu. Daga cikin hanyar evaporation, wanda aka fi amfani da shi shine evaporation na electron beam.

Akwai hanyoyi da yawa na shirya fim ɗin ITO, gami da zubar da sinadarin laser mai ƙarfi, fesawa, zubar da sinadarin sinadarai, fesa pyrolysis, sol-gel, evaporation da sauransu, wanda hanyar fitar da sinadarin electron beam ta fi amfani da ita. Shirya fitar da sinadarin ITO yawanci yana da hanyoyi biyu: na farko shine amfani da sinadarin In, Sn mai ƙarfi a matsayin kayan tushe, a cikin yanayin iskar oxygen don fitar da sinadarin reaction; na biyu shine amfani da cakuda In2O3:, SnO2 mai ƙarfi a matsayin kayan tushe don fitar da sinadarin kai tsaye. Domin yin fim ɗin mai ƙarfin watsawa da ƙarancin juriya, gabaɗaya yana buƙatar zafin substrate mafi girma ko buƙatar cire fim ɗin daga baya. HR Fallah et al. sun yi amfani da hanyar fitar da sinadarin electron beam a ƙananan zafin jiki don ajiye fina-finan ITO masu siriri, don nazarin tasirin ƙimar ajiyewa, zafin annealing da sauran sigogin tsari akan tsarin fim ɗin, kayan lantarki da na gani. Sun nuna cewa rage ƙimar ajiyewa na iya ƙara watsawa da rage juriyar fina-finan da aka girma a ƙananan zafin jiki. Watsawar haske mai gani ya fi kashi 92%, kuma juriyarsa ta kai 7X10-4Ωcm. Sun lalata fina-finan ITO da aka noma a zafin ɗaki a 350~550℃, kuma sun gano cewa mafi girman zafin jiki mai cike da annealing, mafi kyawun kyawun crystalline na fina-finan ITO. Watsawar haske mai bayyane na fina-finan bayan annealing a 550℃ shine kashi 93%, kuma girman hatsi shine kusan 37nm. Hanyar da aka taimaka wa plasma kuma tana iya rage zafin substrate yayin samar da fim, wanda shine mafi mahimmancin abu a cikin samuwar fim ɗin, kuma lu'ulu'u shine mafi mahimmanci. Hanyar da aka taimaka wa plasma kuma tana iya rage zafin substrate yayin samar da fim, kuma fim ɗin ITO da aka samu daga wurin ajiya yana da kyakkyawan aiki. juriyar fim ɗin ITO wanda S. Laux et al suka shirya. yana da ƙasa sosai, 5*10-”Ωcm, kuma shaƙar haske a 550nm bai kai 5% ba, kuma juriyar fim ɗin da kuma bandwidth na gani suma suna canzawa ta hanyar canza matsin iskar oxygen yayin da ake ajiyewa.

– An fitar da wannan labarin ne dagainjin shafa injin injinGuangdong Zhenhua