Indium tin oxide (Indium Tin Oxide, zoro aka dị ka ITO) bụ a sara mbara gbalaga ọdịiche, kpamkpam doped n-ụdị semiconductor ihe, na elu anya ìhè transmittance na ala resistivity e ji mara, na otú ọtụtụ ebe na-eji anyanwụ cell, flat panel ngosipụta, electrochromic windo, inorganic na organic mkpa-film electroluminescence, laser diodets na ngwaọrụ ndị ọzọ, laser diodets na ngwaọrụ ndị ọzọ. nke nkwadebe nke ihe nkiri ITO, gụnyere pulsed laser deposition, sputtering, chemical vepor deposition, spray thermal decomposition, sol-gel, evaporation, etc. N'etiti usoro evaporation, nke a na-ejikarị eme ihe bụ evaporation electron.
Enwere ọtụtụ ụzọ isi kwadebe ihe nkiri ITO, gụnyere mgbanye laser pulsed, sputtering, nsị kemịkalụ, spray pyrolysis, sol-gel, evaporation na ihe ndị ọzọ, nke usoro evaporation nke a na-ejikarị bụ evaporation elektrọn. Nkwadebe evaporation nke ihe nkiri ITO na-enwekarị ụzọ abụọ: otu bụ ojiji nke ịdị ọcha dị elu Na, Sn alloy dị ka isi iyi ihe, na ikuku oxygen maka mmeghachi omume evaporation; nke abụọ bụ ojiji nke elu-ọcha In2O3:, SnO2 ngwakọta dị ka isi iyi ihe maka kpọmkwem evaporation. Iji mee ka ihe nkiri ahụ dị elu na nnyefe dị ala, na-achọkarị ọnọdụ okpomọkụ dị elu ma ọ bụ mkpa maka annealing nke ihe nkiri ahụ. HR Fallah et al. jiri usoro evaporation nke eletrọn na obere okpomọkụ iji tinye ihe nkiri ITO dị mkpa, iji mụọ mmetụta nke ntinye ego, okpomọkụ na-ekpo ọkụ na usoro ndị ọzọ na nhazi nke ihe nkiri ahụ, eletriki na ngwa anya. Ha rụtụrụ aka na iweda ọnụ ọgụgụ ntinye ego nwere ike ime ka nnyefe ahụ dịkwuo elu ma belata ihe mgbochi nke ihe nkiri ndị na-ekpo ọkụ na-ekpo ọkụ. Mbufe nke ìhè a na-ahụ anya karịrị 92%, na resistivity bụ 7X10-4Ωcm. ha kpochapụrụ ihe nkiri ITO ndị toro na ụlọ okpomọkụ na 350 ~ 550 ℃, wee chọpụta na ọ bụrụ na okpomọkụ na-ekpo ọkụ dị elu, ihe nkiri ITO ka mma. nnyefe ọkụ a na-ahụ anya nke ihe nkiri ahụ mgbe annealing na 550 ℃ bụ 93%, na nha ọka bụ ihe dịka 37nm. usoro enyere aka na plasma nwekwara ike ibelata okpomọkụ nke mkpụrụ osisi n'oge a na-emepụta ihe nkiri, nke bụ ihe kachasị mkpa na nhazi nke ihe nkiri ahụ, na crystallinity bụkwa ihe kachasị mkpa. Usoro na-enyere aka na plasma nwekwara ike ibelata okpomọkụ nke mkpụrụ n'oge a na-emepụta ihe nkiri, na ihe nkiri ITO nke enwetara site na nkwụnye ego nwere arụmọrụ dị mma. resistivity nke ihe nkiri ITO nke S. Laux et al kwadebere. dị nnọọ ala, 5 * 10-"Ωcm, na absorption nke ìhè na 550nm bụ ihe na-erughị 5%, na resistivity nke ihe nkiri na anya bandwidth na-agbanwekwa site na-agbanwe ikuku oxygen n'oge nkwụnye ego.
–E wepụtara akụkọ aonye na-emepụta igwe mkpuchi ikukuGuangdong Zhenhua
Oge nzipu: Mar-23-2024