Indium tin oxide (Indium Tin Oxide, hu ua ITO) yog qhov sib txawv ntawm qhov dav, hnyav doped n-hom semiconductor cov ntaub ntawv, nrog pom lub teeb pom kev zoo thiab cov yam ntxwv tsis muaj zog, thiab yog li siv dav hauv cov hnub ci, vaj huam sib luag vaj huam sib luag, cov qhov rais electrochromic, inorganic thiab organic nyias-zaj duab xis electroluminescence thiab lwm yam laser, thiab lwm yam. Muaj ntau txoj hauv kev npaj ntawm ITO zaj duab xis, nrog rau kev siv lub tshuab laser pulse, sputtering, tshuaj vapor deposition, tshuaj tsuag thermal decomposition, sol-gel, evaporation, thiab lwm yam. Ntawm cov txheej txheem evaporation, feem ntau siv yog electron beam evaporation.
Muaj ntau txoj hauv kev los npaj ITO zaj duab xis, suav nrog kev siv lub tshuab hluav taws xob laser, sputtering, tshuaj vapor deposition, tshuaj tsuag pyrolysis, sol-gel, evaporation thiab lwm yam, uas feem ntau siv txoj kev evaporation yog electron beam evaporation. Kev npaj evaporation ntawm ITO cov yeeb yaj kiab feem ntau muaj ob txoj hauv kev: ib qho yog siv cov khoom siv high-purity In, Sn alloy ua cov khoom siv, hauv cov pa oxygen rau cov tshuaj tiv thaiv evaporation; Qhov thib ob yog siv high-purity In2O3:, SnO2 sib tov ua cov khoom siv rau evaporation ncaj qha. Txhawm rau ua kom cov yeeb yaj kiab nrog cov xaim hluav taws xob siab thiab tsis tshua muaj zog, feem ntau yuav tsum muaj qhov kub thiab txias ntawm cov substrate los yog qhov yuav tsum tau ua tom qab annealing ntawm zaj duab xis. HR Fallah et al. siv cov txheej txheem electron beam evaporation ntawm qhov kub qis kom tso ITO cov yeeb yaj kiab nyias, los kawm txog cov txiaj ntsig ntawm qhov tso nyiaj, qhov kub thiab txias thiab lwm yam txheej txheem ntawm cov qauv ntawm cov yeeb yaj kiab, hluav taws xob thiab cov khoom siv kho qhov muag. Lawv tau taw qhia tias kev txo qis ntawm qhov tso tawm tuaj yeem ua rau muaj kev sib kis thiab txo qhov kev tiv thaiv ntawm cov yeeb yaj kiab uas tsis tshua muaj kub-loj. Lub transmittance ntawm pom lub teeb yog ntau tshaj 92%, thiab cov resistivity yog 7X10-4Ωcm. lawv annealed ITO zaj duab xis loj hlob nyob rau hauv chav tsev kub ntawm 350 ~ 550 ℃, thiab pom tias qhov siab dua qhov annealing kub, qhov zoo dua cov crystalline khoom ntawm ITO films. pom lub teeb xa tawm ntawm cov yeeb yaj kiab tom qab annealing ntawm 550 ℃ yog 93%, thiab cov nplej loj yog li 37nm. plasma-pab txoj kev kuj tseem tuaj yeem txo qhov kub ntawm lub substrate thaum tsim cov yeeb yaj kiab, uas yog qhov tseem ceeb tshaj plaws hauv kev tsim cov yeeb yaj kiab, thiab cov crystallinity kuj yog qhov tseem ceeb tshaj plaws. plasma-pab txoj kev kuj tseem tuaj yeem txo qhov kub ntawm lub substrate thaum tsim cov yeeb yaj kiab, thiab ITO zaj duab xis tau txais los ntawm kev tso tawm muaj kev ua tau zoo. lub resistivity ntawm ITO zaj duab xis npaj los ntawm S. Laux li al. yog qhov tsawg heev, 5 * 10-”Ωcm, thiab qhov nqus ntawm lub teeb ntawm 550nm yog tsawg dua 5%, thiab qhov kev tiv thaiv ntawm zaj duab xis thiab optical bandwidth kuj tau hloov pauv los ntawm kev hloov cov pa oxygen thaum lub sij hawm tso tawm.
– Zaj lus no yog tso tawm los ntawmtshuab nqus tsev txheej tshuab manufacturersGuangdong Zhenhua
Post lub sij hawm: Mar-23-2024