ʻO ka Indium tin oxide (Indium Tin Oxide, i kapa ʻia ʻo ITO) he ākea ākea ākea, he nui doped n-type semiconductor material, me ke kiʻekiʻe ʻike ʻia o ka māmā transmittance a me nā ʻano resistivity haʻahaʻa, a no laila hoʻohana nui ʻia i nā cell solar, flat panel displays, electrochromic windows, inorganic a me organic thin-film electroluminescence, laser diodes a me nā ʻano hana ultraviolet o nā mea ʻike ma nā kiʻi ultraviolet, etc. nā kiʻiʻoniʻoni, me ka pulsed laser deposition, sputtering, chemical vapor deposition, spray thermal decomposition, sol-gel, evaporation, etc.
Nui nā ala e hoʻomākaukau ai i ke kiʻi ʻoniʻoni ITO, e like me ka pulsed laser deposition, sputtering, chemical vapor deposition, spray pyrolysis, sol-gel, evaporation a pēlā aku, ʻo ia ka mea maʻamau i hoʻohana ʻia ʻo ka electron beam evaporation. ʻElua ala maʻamau ka hoʻomākaukau ʻana o nā kiʻi ʻoniʻoni ITO: hoʻokahi ka hoʻohana ʻana i ka hoʻomaʻemaʻe kiʻekiʻe In, Sn alloy e like me ke kumu kumu, i ka lewa oxygen no ka hoʻoheheʻe ʻana; ʻO ka lua, ʻo ia ka hoʻohana ʻana i ka In2O3 maʻemaʻe kiʻekiʻe:, SnO2 hui ʻia e like me ke kumu kumu no ka hoʻoheheʻe pololei ʻana. No ka hana ʻana i ke kiʻiʻoniʻoni me ka transmittance kiʻekiʻe a me ka resistivity haʻahaʻa, e koi maʻamau i kahi mahana substrate kiʻekiʻe a i ʻole ka pono no ka annealing ma hope o ke kiʻiʻoniʻoni. HR Fallah et al. ua hoʻohana i ke ʻano hoʻoheheʻe ʻana i ka electron beam ma nā haʻahaʻa haʻahaʻa e waiho i nā kiʻiʻoniʻoni lahilahi ITO, e aʻo i ka hopena o ka deposition rate, annealing annealing a me nā ʻāpana kaʻina hana ʻē aʻe ma ke ʻano o ke kiʻiʻoniʻoni, uila a me nā waiwai optical. Ua kuhikuhi lākou i ka hoʻohaʻahaʻa ʻana i ka helu deposition hiki ke hoʻonui i ka transmittance a hoʻemi i ka resistivity o nā kiʻiʻoniʻoni haʻahaʻa-ulu. ʻOi aku ka transmittance o ke kukui ʻike ma mua o 92%, a ʻo ka resistivity ʻo 7X10-4Ωcm. ua hoʻopili lākou i nā kiʻi ʻoniʻoni ITO i ulu ma ka lumi wela ma 350 ~ 550 ℃, a ʻike ʻia ʻoi aku ka kiʻekiʻe o ka mahana annealing, ʻoi aku ka maikaʻi o ka waiwai crystalline o nā kiʻiʻoniʻoni ITO. ʻO ka transmittance māmā o nā kiʻiʻoniʻoni ma hope o ka annealing ma 550 ℃ he 93%, a ʻo ka nui o ka palaoa ma kahi o 37nm. hiki i ka plasma-assisted method ke hoʻemi i ka mahana o ka substrate i ka wā o ka hoʻokumu ʻana i ke kiʻiʻoniʻoni, ʻo ia ka mea nui i ka hoʻokumu ʻana o ke kiʻiʻoniʻoni, a ʻo ka crystallinity hoʻi ka mea nui loa. Hiki i ke ala i kōkua ʻia i ka plasma ke hoʻemi i ka mahana o ka substrate i ka wā o ka hoʻokumu ʻana i ke kiʻiʻoniʻoni, a ʻo ke kiʻi ʻoniʻoni ITO i loaʻa mai ka deposition he hana maikaʻi. ka resistivity o ka ITO film i hoomakaukauia e S. Laux et al. he haʻahaʻa loa, 5 * 10-"Ωcm, a ʻo ka absorption o ka mālamalama ma 550nm he emi iho ma mua o 5%, a ua hoʻololi pū ʻia ka resistivity o ke kiʻiʻoniʻoni a me ka bandwidth optical ma ka hoʻololi ʻana i ke kaomi oxygen i ka wā o ka waiho ʻana.
-Ua hoʻokuʻu ʻia kēia ʻatikala emea hana mīkini hoʻopaʻa haʻahaʻaGuangdong Zhenhua
Ka manawa hoʻouna: Mar-23-2024