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Features of magnetron sputtering coating chapters 1

Article source:Zhenhua vacuum
Read:10
Published:23-09-08

Compared with other coating technologies, sputtering coating has the following significant features: the working parameters have a large dynamic adjustment range, the coating deposition speed and thickness (the state of the coating area) are easy to control, and there are no design restrictions on the geometry of the sputtering target to ensure the uniformity of the coating; The film layer does not have the problem of droplet particles: almost all metals, alloys and ceramic materials can be made into target materials; By DC or RF sputtering, pure metal or alloy coatings with precise and constant proportions and metal reaction films with gas participation can be generated to meet the diverse and high-precision requirements of films. The typical process parameters of sputtering coating are: the working pressure is 01Pa; The target voltage is 300~700V, and the target power density is 1~36W/cm2. The specific characteristics of sputtering are:

文章第二段

(1) High deposition rate. Due to the use of electrodes, very large target bombardment ion currents can be obtained, so the sputtering etching rate on the target surface and the film deposition rate on the substrate surface are high.

(2) High power efficiency. The probability of collision between low-energy electrons and gas atoms is high, so the gas ionization rate is greatly increased. Correspondingly, the impedance of the discharge gas (or plasma) is greatly reduced. Therefore, compared with DC two-pole sputtering, even if the working pressure is reduced from 1~10Pa to 10-2~10-1Pa, the sputtering voltage is reduced from several thousand volts to hundreds of volts, and the sputtering efficiency and deposition rate increase by orders of magnitude.

(3) Low-energy sputtering. Due to the low cathode voltage applied to the target, the plasma is bound in the space near the cathode by a magnetic field, which inhibits the incidence of high-energy charged particles to the side of the substrate. Therefore, the degree of damage caused by the bombardment of charged particles to substrates such as semiconductor devices is lower than that of other sputtering methods.

–This article is released by vacuum coating machine manufacturer Guangdong Zhenhua.


Post time: Sep-08-2023