Xa kuthelekiswa nezinye iiteknoloji zokugquma, ukugquma okutshiza kuneempawu ezibalulekileyo ezilandelayo: iiparameter zokusebenza zinoluhlu olukhulu lohlengahlengiso oluguquguqukayo, isantya sokubekwa kwengubo kunye nobukhulu (imeko yendawo yokugquma) kulula ukuyilawula, kwaye akukho mida yoyilo kwijometri yethagethi yokugquma ukuqinisekisa ukufana kwengubo; Umaleko wefilimu awunangxaki yamasuntswana amathontsi: phantse zonke iintsimbi, ii-alloys kunye nezinto zeseramikhi zinokwenziwa zibe zizinto ekujoliswe kuzo; Ngokugquma okutshiza kwe-DC okanye kwe-RF, ukugquma okucocekileyo kwesinyithi okanye i-alloy okunemilinganiselo echanekileyo nengaguqukiyo kunye neefilimu zokusabela kwesinyithi ezithatha inxaxheba kwigesi zinokwenziwa ukuhlangabezana neemfuno ezahlukeneyo nezichanekileyo zeefilimu. Iiparameter zenkqubo eqhelekileyo yokugquma okutshiza zezi: uxinzelelo olusebenzayo yi-01Pa; I-voltage ekujoliswe kuyo yi-300 ~ 700V, kwaye uxinano lwamandla ekujoliswe kuwo yi-1 ~ 36W/cm2. Iimpawu ezithile zokugquma zezi:
(1) Izinga eliphezulu lokufumba. Ngenxa yokusetyenziswa kwee-electrode, imisinga ye-ion enkulu kakhulu ekujoliswe kuyo ingafunyanwa, ngoko ke izinga lokufumba elinomoya kumphezulu ekujoliswe kuwo kunye nezinga lokufumba ifilimu kumphezulu we-substrate liphezulu.
(2) Ukusebenza kakuhle kwamandla aphezulu. Amathuba okungqubana phakathi kwee-electron ezisebenzisa amandla aphantsi kunye neeathom zegesi aphezulu, ngoko ke izinga le-ionization yegesi liyakhula kakhulu. Ngokuhambelanayo, ukuthintelwa kwegesi ekhutshwayo (okanye iplasma) kuncitshisiwe kakhulu. Ke ngoko, xa kuthelekiswa nokutshiza kwe-DC two-pole, nokuba uxinzelelo olusebenzayo luncitshisiwe ukusuka kwi-1~10Pa ukuya kwi-10-2~10-1Pa, i-voltage yokutshiza incitshisiwe ukusuka kumawaka aliqela ee-volts ukuya kumakhulu ee-volts, kwaye ukusebenza kakuhle kokutshiza kunye nezinga lokufakwa kwegesi kuyanda ngokwemiyalelo yobukhulu.
(3) Ukutshiza ngamandla aphantsi. Ngenxa ye-voltage ephantsi ye-cathode esetyenziswa kwindawo ekujoliswe kuyo, i-plasma ibotshelelwa kwindawo ekufutshane ne-cathode yi-magnetic field, ethintela ukwenzeka kwamasuntswana atshajiweyo ngamandla aphezulu ecaleni kwe-substrate. Ke ngoko, inqanaba lomonakalo obangelwe kukuqhushumba kwamasuntswana atshajiweyo kwi-substrates ezifana nezixhobo ze-semiconductor liphantsi kunelo lezinye iindlela zokutshiza.
–Eli nqaku likhutshwe nguumenzi womatshini wokugquma nge-vacuumGuangdong Zhenhua.
Ixesha lokuthumela: Sep-08-2023