A. High sputtering rate. For example, when sputtering SiO2, the deposition rate can be up to 200nm/min, usually up to 10~100nm/min.
And the rate of film formation is directly proportional to the high frequency power.
B.The adhesion between the film and the substrate is greater than the vacuum vapor deposition of the film layer. This is due to the base to the body of the incident atom average kinetic energy of about 10eV, and in the plasma substrate will be subjected to strict sputtering cleaning resulting in less pinholes in the membrane layer, high purity, dense membrane layer.
C.Wide adaptability of the membrane material, either metal or non-metal or compounds, almost all materials can be prepared into a round plate, can be used for a long time.
D.The requirements for the shape of the substrate are not demanding. The uneven surface of the substrate or the existence of small slits with a width of less than 1mm can also be sputtered into a film.
Application of radio frequency sputtering coating Based on the above characteristics, the coating deposited by radio frequency sputtering is currently more widely used, especially in the preparation of integrated circuits and dielectric function film is especially widely used. For example, non-conductor and semiconductor materials deposited by RF sputtering, including elements: semiconductor Si and Ge, compound materials GsAs, GaSb, GaN, InSb, InN, AIN, CaSe, Cds, PbTe, high-temperature semiconductors SiC, ferroelectric compounds B14T3O12, gasification object materials In2Os, SiO2, Al203, Y203, TiO2, ZiO2, SnO2, PtO, HfO2, Bi2O2, ZnO2, CdO, glass, plastic, etc.
If several targets are placed in the coating chamber, it is also possible to complete the preparation of multi-layer film in the same chamber without destroying the vacuum at one time. Dedicated electrode radio frequency device for bearing inner and outer rings for the preparation of disulfide coating is an example of the equipment used in the radio frequency source frequency of 11.36MHz, target voltage of 2 ~ 3kV, the total power of 12kW, the working range of the magnetic induction strength of 0.008T, the limit of the vacuum chamber vacuum is 6.5X10-4Pa. high and low deposition rate. Moreover, the RF sputtering power utilization efficiency is low, and a large amount of power is converted into heat, which is lost from the cooling water of the target.
–This article is released by vacuum coating machine manufacturer Guangdong Zhenhua
Post time: Dec-21-2023