A. Kuwanda kwekupfapfaidza. Semuenzaniso, kana uchipfapfaidza SiO2, mwero wekuiswa kwemvura unogona kusvika 200nm/min, kazhinji kusvika 10~100nm/min.
Uye mwero wekuumbwa kwefirimu unoenderana zvakananga nesimba rema frequency akakwira.
B. Kubatana pakati pefirimu ne substrate kwakakura kupfuura kudonhedzwa kwevacuum vapor yefirimu layer. Izvi zvinokonzerwa nekuti hwaro hwemuviri weatomu yechiitiko hunosvika avhareji yesimba rekinetic yeinenge 10eV, uye mu plasma substrate ichaongororwa zvakanyanya zvichikonzera maburi mashoma mu membrane layer, kuchena kwakanyanya, dense membrane layer.
C. Kuchinjika kwakakura kwezvinhu zve membrane, kungave simbi kana kuti kwete simbi kana kuti zvinosanganiswa, zvinhu zvese zvinogona kugadzirwa kuita denderedzwa, zvinogona kushandiswa kwenguva yakareba.
D. Zvinodiwa kuti substrate ive nechimiro chayo hazvidiwi. Kusaenzana kwesubstrate kana kuvapo kwezvidimbu zvidiki zvine upamhi husingasviki 1mm zvinogonawo kuputirwa mufirimu.
Kushandiswa kwejira rekuputira mafrequency eradio. Zvichienderana nemaitiro ari pamusoro apa, jira rekuputira mafrequency eradio ndiro rinoshandiswa zvakanyanya pari zvino, kunyanya mukugadzirira macircuits akabatanidzwa uye firimu rebasa redielectric ndiro rinoshandiswa zvakanyanya. Semuenzaniso, zvinhu zvisiri zveconductor uye semiconductor zvakachengetwa neRF sputtering, zvinosanganisira zvinhu: semiconductor Si naGe, zvinhu zvecompound GsAs, GaSb, GaN, InSb, InN, AIN, CaSe, Cds, PbTe, semiconductors dzekupisa kwakanyanya SiC, ferroelectric compounds B14T3O12, zvinhu zvegasification In2Os, SiO2, Al203, Y203, TiO2, ZiO2, SnO2, PtO, HfO2, Bi2O2, ZnO2, CdO, girazi, plastiki, nezvimwewo.
Kana zvinangwa zvakawanda zvikaiswa mukamuri yekuputira, zvinokwanisikawo kupedzisa kugadzirira firimu rine layer yakawanda mukamuri imwe chete pasina kuparadza vacuum panguva imwe chete. Mudziyo wakatsaurirwa we electrode radio frequency wekutakura mhete dzemukati nedzekunze dzekugadzirira disulfide coating muenzaniso wemidziyo inoshandiswa mufrequency yeredhiyo frequency ye11.36MHz, target voltage ye2 ~ 3kV, simba rese re12kW, simba rekushanda remagnetic induction strength ye0.008T, muganho wevacuum chamber vacuum i6.5X10-4Pa. mwero wepamusoro uye wakaderera wekuisa. Uyezve, kushanda zvakanaka kweRF sputtering power use kwakaderera, uye simba guru rinoshandurwa kuita kupisa, iro rinorasika kubva mumvura inotonhorera yechinangwa.
–Chinyorwa ichi chakaburitswa namugadziri wemuchina wevacuum coatingGuangdong Zhenhua
Nguva yekutumira: Zvita-21-2023