A. Izinga eliphezulu lokuphalaza. Isibonelo, lapho kuphalaza i-SiO2, izinga lokufakwa lingafika ku-200nm/min, ngokuvamile lifika ku-10 ~ 100nm/min.
Futhi izinga lokwakheka kwefilimu lilingana ngqo namandla emvamisa ephezulu.
B. Ukunamathelana phakathi kwefilimu ne-substrate kukhulu kunokufakwa komphunga we-vacuum kwesendlalelo sefilimu. Lokhu kungenxa yokuthi isisekelo somzimba wesigameko se-athomu, isilinganiso samandla e-kinetic esingaba ngu-10eV, futhi ku-substrate ye-plasma kuzohlanzwa ngokuqinile okuholela ekuncipheni kwemigodi engqimbeni ye-membrane, ubumsulwa obuphezulu, ungqimba lwe-membrane oluqinile.
C. Njengoba izinto ezihlanganisiwe zivumelana nezimo kabanzi, kungaba yinsimbi noma okungeyona insimbi noma ama-compound, cishe zonke izinto zingalungiswa zibe yipuleti eliyindilinga, zingasetshenziswa isikhathi eside.
D. Izidingo zesimo se-substrate azidingi. Ubuso obungalingani be-substrate noma ukuba khona kwezikhala ezincane ezinobubanzi obungaphansi kuka-1mm nakho kungafakwa kufilimu.
Ukusetshenziswa kwengubo yokubhoboza imvamisa yomsakazo Ngokusekelwe ezicini ezingenhla, ingubo ebekwe yi-radio frequency sputtering okwamanje isetshenziswa kabanzi, ikakhulukazi ekulungiseleleni amasekethe ahlanganisiwe futhi ifilimu yomsebenzi we-dielectric isetshenziswa kabanzi kakhulu. Isibonelo, izinto ezingezona ezomqhubi kanye neze-semiconductor ezibekwe yi-RF sputtering, okuhlanganisa izinto: i-semiconductor Si kanye ne-Ge, izinto ezihlanganisiwe i-GsAs, i-GaSb, i-GaN, i-InSb, i-InN, i-AIN, i-CaSe, i-Cds, i-PbTe, ama-semiconductor okushisa okuphezulu i-SiC, ama-ferroelectric compounds i-B14T3O12, izinto ze-gasification i-In2Os, i-SiO2, i-Al203, i-Y203, i-TiO2, i-ZiO2, i-SnO2, i-PtO, i-HfO2, i-Bi2O2, i-ZnO2, i-CdO, ingilazi, ipulasitiki, njll.
Uma kubekwa amatshe amaningana ekamelweni lokumboza, kungenzeka futhi ukuqedela ukulungiswa kwefilimu enezingqimba eziningi ekamelweni elifanayo ngaphandle kokubhubhisa i-vacuum ngesikhathi esisodwa. Idivayisi yemvamisa yomsakazo ye-electrode ezinikele yokuthwala amasongo angaphakathi nangaphandle okulungiselela i-disulfide coating iyisibonelo semishini esetshenziswa kumvamisa yomthombo wemvamisa yomsakazo engu-11.36MHz, i-voltage eqondiwe engu-2 ~ 3kV, amandla aphelele angu-12kW, ububanzi bokusebenza kwamandla okungeniswa kwamagnetic angu-0.008T, umkhawulo we-vacuum yegumbi lokumboza ingu-6.5X10-4Pa. izinga eliphezulu neliphansi lokufakwa. Ngaphezu kwalokho, ukusebenza kahle kokusetshenziswa kwamandla okumpompa kwe-RF kuphansi, futhi inani elikhulu lamandla liguqulwa libe ukushisa, okulahleka emanzini okupholisa ethagethi.
–Lesi sihloko sikhishwe yi-umenzi womshini wokumboza nge-vacuumI-Guangdong Zhenhua
Isikhathi sokuthunyelwe: Disemba-21-2023