A. Kuchuluka kwa kupopera madzi. Mwachitsanzo, popopera madzi a SiO2, kuchuluka kwa kupopera madzi kumatha kufika 200nm/min, nthawi zambiri kufika 10 ~ 100nm/min.
Ndipo liwiro la kupangidwa kwa filimu limagwirizana mwachindunji ndi mphamvu ya ma frequency apamwamba.
B. Kugwirizana pakati pa filimu ndi substrate ndi kwakukulu kuposa kuyika kwa nthunzi ya vacuum ya filimu. Izi zimachitika chifukwa cha mphamvu ya kinetic ya atomu yomwe ili pansi pa thupi la chinthucho ya pafupifupi 10eV, ndipo mu plasma substrate idzayeretsedwa mwamphamvu zomwe zimapangitsa kuti mabowo ang'onoang'ono mu nembanemba wosanjikiza, kuyera kwakukulu, ndi nembanemba wosanjikiza wokhuthala.
C. Chifukwa cha kusinthasintha kwakukulu kwa zinthu za nembanemba, kaya ndi chitsulo kapena chosakhala chitsulo kapena zinthu zina, pafupifupi zipangizo zonse zimatha kukonzedwa kukhala mbale yozungulira, zingagwiritsidwe ntchito kwa nthawi yayitali.
D. Zofunikira pa mawonekedwe a substrate sizofunikira. Malo osafanana a substrate kapena kukhalapo kwa mipata yaying'ono yokhala ndi m'lifupi wosakwana 1mm kungaphatikizidwenso mu filimu.
Kugwiritsa ntchito chophimba cha ma radio frequency sputtering Kutengera ndi makhalidwe omwe ali pamwambapa, chophimba chomwe chimayikidwa ndi ma radio frequency sputtering chikugwiritsidwa ntchito kwambiri pakadali pano, makamaka pokonzekera ma integrated circuits ndipo dielectric function film imagwiritsidwa ntchito kwambiri. Mwachitsanzo, zinthu zosagwiritsa ntchito conductor ndi semiconductor zomwe zimayikidwa ndi RF sputtering, kuphatikizapo zinthu: semiconductor Si ndi Ge, zinthu zophatikizika GsAs, GaSb, GaN, InSb, InN, AIN, CaSe, Cds, PbTe, ma semiconductor otentha kwambiri SiC, ma ferroelectric compounds B14T3O12, zinthu zopanga gasification In2Os, SiO2, Al203, Y203, TiO2, ZiO2, SnO2, PtO, HfO2, Bi2O2, ZnO2, CdO, galasi, pulasitiki, ndi zina zotero.
Ngati zolinga zingapo zayikidwa mu chipinda chophikira, ndizothekanso kumaliza kukonzekera filimu ya multi-layer mu chipinda chomwecho popanda kuwononga vacuum nthawi imodzi. Chipangizo chodzipereka cha ma electrode radio frequency chonyamula mphete zamkati ndi zakunja zokonzekera disulfide coating ndi chitsanzo cha zida zomwe zimagwiritsidwa ntchito mu ma frequency source source a 11.36MHz, target voltage ya 2 ~ 3kV, mphamvu yonse ya 12kW, mphamvu yogwira ntchito ya magnetic induction ya 0.008T, malire a vacuum chamber vacuum ndi 6.5X10-4Pa. high and low deposition rate. Kuphatikiza apo, mphamvu yogwiritsira ntchito mphamvu ya RF sputtering ndi yochepa, ndipo mphamvu zambiri zimasinthidwa kukhala kutentha, komwe kumatayika kuchokera kumadzi ozizira a chandamale.
– Nkhaniyi yatulutsidwa ndiwopanga makina ophikira vacuumGuangdong Zhenhua
Nthawi yotumizira: Disembala-21-2023