A. Tus nqi sputtering siab. Piv txwv li, thaum sputtering SiO2, tus nqi tso tawm tuaj yeem txog li 200nm / feeb, feem ntau txog li 10 ~ 100nm / feeb.
Thiab tus nqi ntawm kev tsim zaj duab xis yog ncaj qha proportional rau lub zog siab zaus.
B. Qhov kev sib txuas ntawm zaj duab xis thiab lub substrate yog ntau dua li qhov nqus pa ntawm cov zaj duab xis txheej. Qhov no yog vim lub zog kinetic nruab nrab ntawm lub hauv paus rau lub cev ntawm qhov xwm txheej atom yog li 10 eV, thiab hauv cov plasma substrate yuav raug kev ntxuav sputtering nruj nreem ua rau muaj qhov tsawg dua hauv cov txheej membrane, purity siab, thiab cov txheej membrane tuab.
C. Kev hloov pauv dav dav ntawm cov khoom siv membrane, hlau lossis tsis yog hlau lossis cov khoom sib xyaw, yuav luag txhua yam khoom siv tuaj yeem npaj rau hauv lub phaj puag ncig, siv tau ntev.
D. Cov kev cai rau cov duab ntawm lub substrate tsis nyuaj. Qhov chaw tsis sib npaug ntawm lub substrate lossis muaj cov qhov me me nrog qhov dav tsawg dua 1 hli kuj tuaj yeem sputtered rau hauv ib zaj duab xis.
Daim ntawv thov ntawm cov txheej txheem xov tooj cua zaus sputtering Raws li cov yam ntxwv saum toj no, cov txheej txheem tso los ntawm xov tooj cua zaus sputtering tam sim no siv dav dua, tshwj xeeb tshaj yog hauv kev npaj cov voj voog sib xyaw thiab cov yeeb yaj kiab dielectric ua haujlwm tau siv dav heev. Piv txwv li, cov ntaub ntawv tsis-conductor thiab semiconductor tso los ntawm RF sputtering, suav nrog cov ntsiab lus: semiconductor Si thiab Ge, cov ntaub ntawv sib xyaw GsAs, GaSb, GaN, InSb, InN, AIN, CaSe, Cds, PbTe, semiconductors kub siab SiC, ferroelectric sib xyaw B14T3O12, cov khoom siv roj In2Os, SiO2, Al203, Y203, TiO2, ZiO2, SnO2, PtO, HfO2, Bi2O2, ZnO2, CdO, iav, yas, thiab lwm yam.
Yog tias muaj ntau lub hom phiaj tso rau hauv lub chamber txheej, nws tseem ua tau kom ua tiav kev npaj cov zaj duab xis ntau txheej hauv tib lub chamber yam tsis rhuav tshem lub tshuab nqus tsev ib zaug. Lub cuab yeej siv hluav taws xob hluav taws xob tshwj xeeb rau kev tuav cov nplhaib sab hauv thiab sab nraud rau kev npaj cov txheej disulfide yog ib qho piv txwv ntawm cov khoom siv siv hauv lub xov tooj cua zaus qhov zaus ntawm 11.36MHz, lub hom phiaj voltage ntawm 2 ~ 3kV, tag nrho lub zog ntawm 12kW, qhov ua haujlwm ntawm lub zog induction magnetic ntawm 0.008T, qhov txwv ntawm lub chamber nqus tsev yog 6.5X10-4Pa. siab thiab qis deposition tus nqi. Ntxiv mus, RF sputtering fais fab siv efficiency yog qis, thiab ntau lub zog hloov pauv mus rau hauv cua sov, uas ploj ntawm cov dej txias ntawm lub hom phiaj.
– Tsab xov xwm no yog tso tawm los ntawmlub tshuab nqus tsev txheej tshuab chaw tsim khoomGuangdong Zhenhua
Lub sijhawm tshaj tawm: Lub Kaum Ob Hlis-21-2023