A. Izinga eliphezulu lokutshiza. Umzekelo, xa kutshiza i-SiO2, izinga lokufakwa linokufikelela kwi-200nm/min, ngesiqhelo ukuya kuthi ga kwi-10~100nm/min.
Kwaye izinga lokwenziwa kwefilimu lihambelana ngokuthe ngqo namandla aphezulu eefrikhwensi.
B. Ukunamathelana phakathi kwefilimu kunye ne-substrate kukhulu kunokufakwa komphunga we-vacuum kwi-film layer. Oku kungenxa yokuba isiseko somzimba we-atom yesiganeko i-avareji ye-kinetic energy ye-10eV, kwaye kwi-plasma substrate iya kuhlaziywa ngokungqongqo okubangela ukuba imingxuma emincinci kwi-membrane layer ibe mdaka, ubumsulwa obuphezulu, kunye ne-dense membrane layer.
C. Ukuguquguquka ngokubanzi kwezinto ze-membrane, nokuba zesinyithi okanye ezingezizo zesinyithi okanye iikhompawundi, phantse zonke izinto zinokulungiswa zibe yipleyiti engqukuva, zingasetyenziswa ixesha elide.
D.Iimfuneko zesimo se-substrate azinzima. Umphezulu ongalinganiyo we-substrate okanye ukubakho kweendawo ezincinci ezinobubanzi obungaphantsi kwe-1mm nazo zinokutshizwa zibe yifilimu.
Ukusetyenziswa kwe-radio frequency sputtering coating Ngokusekelwe kwiimpawu ezingasentla, i-coating efakwe yi-radio frequency sputtering isetyenziswa kakhulu okwangoku, ngakumbi ekulungiseleleni iisekethe ezidibeneyo kwaye ifilimu yomsebenzi we-dielectric isetyenziswa kakhulu. Umzekelo, izixhobo ezingezizo ze-conductor kunye neze-semiconductor ezifakwe yi-RF sputtering, kubandakanya izinto: i-semiconductor Si kunye ne-Ge, izinto ezidityanisiweyo ze-GsAs, i-GaSb, i-GaN, i-InSb, i-InN, i-AIN, i-CaSe, ii-Cds, i-PbTe, ii-semiconductors ezishushu kakhulu ze-SiC, ii-ferroelectric compounds ze-B14T3O12, izinto ze-gasification object In2Os, i-SiO2, i-Al203, i-Y203, i-TiO2, i-ZiO2, i-SnO2, i-PtO, i-HfO2, i-Bi2O2, i-ZnO2, i-CdO, iglasi, iplastiki, njl.
Ukuba iithagethi ezininzi zibekwe kwigumbi lokugquma, kunokwenzeka ukuba kugqitywe ukulungiswa kwefilimu enamaleko amaninzi kwigumbi elinye ngaphandle kokutshabalalisa i-vacuum ngaxeshanye. Isixhobo serediyo ye-electrode esizinikeleyo sokuthwala izangqa zangaphakathi nezangaphandle zokulungiselela i-disulfide coating ngumzekelo wezixhobo ezisetyenziswa kwi-frequency yomthombo werediyo ye-11.36MHz, i-voltage ekujoliswe kuyo ye-2 ~ 3kV, amandla apheleleyo e-12kW, uluhlu lokusebenza lwamandla okungenisa amandla e-magnetic ye-0.008T, umda we-vacuum chamber vacuum yi-6.5X10-4Pa. izinga eliphezulu neliphantsi lokufaka. Ngaphezu koko, ukusebenza kakuhle kokusetyenziswa kwamandla e-RF sputtering kuphantsi, kwaye amandla amaninzi aguqulwa abe bubushushu, obulahleka emanzini apholisayo ethagethi.
–Eli nqaku likhutshwe nguumenzi womatshini wokugquma nge-vacuumGuangdong Zhenhua
Ixesha lokuthumela: Disemba-21-2023