Xa kuthelekiswa nobunye ubuchwepheshe bokugquma, i-sputtering coating inezi mpawu zilandelayo ezibalulekileyo: iiparameters zokusebenza zinoluhlu olukhulu lohlengahlengiso oluguquguqukayo, isantya sokubeka ukutyabeka kunye nobukhulu (imeko yendawo yokugquma) kulula ukuyilawula, kwaye akukho zithintelo zoyilo kwijometri yethagethi ye-sputtering ukuqinisekisa ukufana kwengubo; Uluhlu lwefilimu alunayo ingxaki ye-droplet particles: phantse zonke isinyithi, i-alloys kunye nezixhobo ze-ceramic zingenziwa kwizinto ezijoliswe kuzo; Nge-DC okanye i-RF sputtering, isinyithi esisulungekileyo okanye ialloy coatings ezinomlinganiselo ochanekileyo kunye nongaguqukiyo kunye neefilim zentsimbi eziphendula ngentatho-nxaxheba yegesi zinokuveliswa ukuhlangabezana neemfuno ezahlukeneyo nezichanekileyo eziphezulu zeefilimu. Iiparamitha zenkqubo eqhelekileyo yokugquma i-sputtering zezi: uxinzelelo olusebenzayo ngu-01Pa; I-voltage ekujoliswe kuyo yi-300 ~ 700V, kunye nokuxinwa kwamandla okujoliswe kuyo yi-1 ~ 36W / cm2. Iimpawu ezithile zokutshiza zezi:
(1) Izinga eliphezulu lokubekwa. Ngenxa yokusetyenziswa kwee-electrode, imisinga ye-ion ekujoliswe kuyo enkulu kakhulu inokufumaneka, ngoko ke izinga lokutshiza lokutshiza kwindawo ekujoliswe kuyo kunye nesantya sokubekwa kwefilimu kumphezulu we-substrate uphezulu.
(2) Ukusebenza kwamandla aphezulu. Amathuba okungqubana phakathi kwee-electron zamandla aphantsi kunye ne-athomu yegesi iphezulu, ngoko ke izinga le-ionization yegesi liye landa kakhulu. Ngokuhambelanayo, i-impedance yegesi yokukhupha (okanye i-plasma) iyancipha kakhulu. Ke ngoko, xa kuthelekiswa ne-DC two-pole sputtering, nokuba uxinzelelo lokusebenza luncitshisiwe ukusuka kwi-1 ~ 10Pa ukuya kwi-10-2 ~ 10-1Pa, i-voltage ye-sputtering iyancitshiswa ukusuka kumawaka aliqela e-volts ukuya kumakhulu e-volts, kunye nokusebenza kakuhle kokutshiza kunye nesantya sokubeka ukunyuka ngemiyalelo yobukhulu.
(3) Ukutshiza okuphantsi kwamandla. Ngenxa yombane ophantsi we-cathode osetyenzisiweyo kwithagethi, i-plasma ibotshelelwe kwindawo ekufutshane ne-cathode yintsimi yamagnetic, evimbela iziganeko ze-high-energy charges particles ukuya kwicala le-substrate. Ngoko ke, iqondo lomonakalo obangelwa ukubhobhoza kweengqungquthela ezihlawulisiweyo kwii-substrates ezifana nezixhobo ze-semiconductor ziphantsi kunezinye iindlela zokutshiza.
–Eli nqaku likhutshwa nguumenzi womatshini wokugqumaGuangdong Zhenhua.
Ixesha lokuposa: Sep-08-2023