A. Izinga eliphezulu lokufafaza. Isibonelo, lapho ufafaza i-SiO2, izinga lokubeka lingafika ku-200nm/min, ngokuvamile lifike ku-10~100nm/min.
Futhi izinga lokubunjwa kwefilimu lilingana ngokuqondile namandla avela phezulu.
B. Ukunamathela phakathi kwefilimu ne-substrate kukhulu kunomhwamuko we-vacuum wongqimba lwefilimu. Lokhu kungenxa yesisekelo somzimba we-athomu yesigameko isilinganiso samandla e-kinetic angaba ngu-10eV, futhi ku-substrate ye-plasma izobhekana nokuhlanzwa okuqinile okuholela ekunciphiseni kwamaphinifa oqweqweni lolwelwesi, ukuhlanzeka okuphezulu, ungqimba oluminyene lwe-membrane.
C. Ukuguquguquka okubanzi kwempahla ye-membrane, kungaba insimbi noma okungezona insimbi noma izinhlanganisela, cishe zonke izinto zingalungiswa zibe ipuleti eliyindilinga, zingasetshenziswa isikhathi eside.
D.Izidingo zomumo we-substrate azidingeki. Ubuso obungalingani be-substrate noma ubukhona bemifantu emincane enobubanzi obungaphansi kuka-1mm nakho kungafafazwa kufilimu.
Ukusetshenziswa kwe-sputtering yefrikhwensi yomsakazo Ngokusekelwe ezicini ezingenhla, ukunamathela okufakwe i-sputtering yefrikhwensi yomsakazo okwamanje kusetshenziswa kabanzi, ikakhulukazi ekulungiseleleni amasekhethi ahlanganisiwe kanye nefilimu yokusebenza kwe-dielectric isetshenziswa kabanzi ikakhulukazi. Isibonelo, izinto ezingezona i-conductor ne-semiconductor ezifakwe i-RF sputtering, okuhlanganisa izakhi: i-semiconductor Si ne-Ge, izinto ezihlanganisiwe ze-GsAs, i-GaSb, i-GaN, i-InSb, i-InN, i-AIN, i-CaSe, ama-Cds, i-PbTe, ama-semiconductors okushisa aphezulu i-SiC, izinhlanganisela ze-ferroelectric B14O2O2O3 izinto zokwakha I-Al203, Y203, TiO2, ZiO2, SnO2, PtO, HfO2, Bi2O2, ZnO2, CdO, ingilazi, ipulasitiki, njll.
Uma izinhloso eziningana zifakwe ekamelweni lokumboza, kungenzeka futhi ukuqedela ukulungiswa kwefilimu enezingqimba eziningi ekamelweni elifanayo ngaphandle kokubhubhisa i-vacuum ngesikhathi esisodwa. Idivaysi yefrikhwensi yomsakazo we-electrode ozinikele wokuthwala izindandatho zangaphakathi nangaphandle zokulungiselela ukunamathela kwe-disulfide iyisibonelo semishini esetshenziswa ku-11.36MHz yomthombo wefrikhwensi yomsakazo, i-voltage eqondiwe engu-2 ~ 3kV, amandla aphelele angu-12kW, ububanzi bokusebenza bamandla okungenisa kazibuthe angu-0.008T, umkhawulo we-vacuum 6.5 Pax 0 izinga lokubeka eliphezulu neliphansi. Ngaphezu kwalokho, ukusebenza kahle kokusetshenziswa kwamandla e-RF sputtering kuphansi, futhi amandla amaningi aguqulwa abe ukushisa, alahleka emanzini apholisayo ahlosiwe.
-Le ndatshana ikhishwe nguumenzi womshini we-vacuum coatingI-Guangdong Zhenhua
Isikhathi sokuthumela: Dec-21-2023