Kwinkqubo yokugquma i-sputtering, ii-compounds zingasetyenziswa njengeethagethi zokulungiselela iifilimu ezenziwe ngeekhemikhali. Nangona kunjalo, ukwakheka kwefilimu eyenziwe emva kokugxobhoza kwezinto ekujoliswe kuzo kudla ngokuphambuka kakhulu kukwakheka kokuqala kwezinto ekujoliswe kuzo, kwaye ngenxa yoko akuhlangabezani neemfuno zoyilo lokuqala. Ukuba kusetyenziswa ithagethi yesinyithi ecocekileyo, igesi esebenzayo efunekayo (umz., ioksijini xa kulungiswa iifilimu ze-oxide) ixutywa ngabom kwigesi esebenzayo (ekhuphayo), ukuze iphendule ngokweekhemikhali nezinto ekujoliswe kuzo ukuvelisa ifilimu encinci enokulawulwa ngokweefom kunye neempawu zayo. Le ndlela idla ngokubizwa ngokuba yi-"reaction sputtering".
Njengoko bekutshiwo ngaphambili, ukutshiza nge-RF kungasetyenziselwa ukufaka iifilimu ze-dielectric kunye neefilimu ezahlukeneyo ze-compound. Nangona kunjalo, ukuze kulungiselelwe ifilimu "ecocekileyo", kuyimfuneko ukuba nethagethi "ecocekileyo", i-oxide ecocekileyo kakhulu, i-nitride, i-carbide, okanye enye i-compound powder. Ukucubungula ezi powders zibe yithagethi yesimo esithile kufuna ukongezwa kwezongezo ezifunekayo ekubumbeni okanye ekutshiseni, nto leyo ekhokelela ekunciphiseni okukhulu kokucoceka kwethagethi kunye nefilimu ephumayo. Nangona kunjalo, ekutshizeni okusebenzayo, ekubeni iintsimbi ezicocekileyo kakhulu kunye neegesi ezicocekileyo kakhulu zingasetyenziswa, iimeko ezifanelekileyo zibonelelwa ukulungiselela iifilimu ezicocekileyo kakhulu. Ukutshiza okusebenzayo kufumene ingqwalasela ekhulayo kwiminyaka yakutshanje kwaye kube yindlela ephambili yokwandisa iifilimu ezincinci zeekhompawundi ezahlukeneyo ezisebenzayo. Isetyenziswe kakhulu ekwenziweni kweekhompawundi ze-IV, I- kunye ne-IV-V, ii-semiconductors ezichasene ne-refractory, kunye neendidi ezahlukeneyo ze-oxides, ezifana nokusetyenziswa komxube we-polycrystalline Si kunye ne-CH./Ar weegesi ukudubula ukuthotywa kweefilimu ezibhityileyo ze-SiC, i-Ti target kunye ne-N/Ar ukulungiselela iifilimu eziqinileyo ze-TiN, i-Ta kunye ne-O/Ar ukulungiselela i-TaO; iifilimu ezibhityileyo ze-dielectric, i-Fe kunye ne-O,/Ar ukulungiselela iifilimu zokurekhoda ze-FezO; -FezO., iifilimu ze-AIN piezoelectric ezine-A1 kunye ne-N/Ar, iifilimu zokufaka ezikhethiweyo ze-A1-CO ezine-AI kunye ne-CO/Ar, kunye neefilimu ze-YBaCuO-superconducting ezine-Y-Ba-Cu kunye ne-O/Ar, phakathi kwezinye.
–Eli nqaku likhutshwe nguumenzi womatshini wokugquma nge-vacuumGuangdong Zhenhua
Ixesha leposi: Jan-18-2024