Kwinkqubo yokugquma i-sputtering, iikhompawundi zinokusetyenziswa njengeethagethi zokulungiswa kweefilimu ezenziwe ngemichiza. Nangona kunjalo, ukubunjwa kwefilimu eveliswe emva kokutshiza kwesixhobo esijoliswe kuyo kudla ngokuphambuka kakhulu ekubunjweni kokuqala kwezinto ekujoliswe kuzo, kwaye ngoko ke akuhlangabezani neemfuno zoyilo lwangaphambili. Ukuba i-target yensimbi ecocekileyo isetyenzisiweyo, i-gas esebenzayo efunekayo (umzekelo, i-oksijini xa ilungiselela iifilimu ze-oxide) ixutywe ngokucophelela kwi-gas esebenzayo (i-discharge), ukwenzela ukuba iphendule imichiza kunye nezinto ezijoliswe kuzo ukuvelisa ifilimu encinci enokulawulwa ngokumalunga nokubunjwa kwayo kunye neempawu. Le ndlela idla ngokubizwa ngokuba “yi-reaction sputtering”.
Njengoko bekutshiwo ngaphambili, i-RF sputtering inokusetyenziselwa ukufaka iifilimu zedielectric kunye neefilimu ezahlukeneyo ezihlanganisiweyo. Nangona kunjalo, ukuze ulungiselele ifilimu "ecocekileyo", kuyimfuneko ukuba ube nethagethi "ecocekileyo", i-high-purity oxide, i-nitride, i-carbide, okanye enye i-powder powder. Ukucutshungulwa kwezi powders kwithagethi yesimo esithile kufuna ukongezwa kwezongezo eziyimfuneko ekubunjweni okanye kwi-sintering, okukhokelela ekunciphiseni okukhulu ekuhlambulukeni kwethagethi kunye nefilimu ebangelwayo. Kwi-sputtering esebenzayo, nangona kunjalo, ekubeni iintsimbi ezicocekileyo kunye neegesi ezicocekileyo zingasetyenziswa, iimeko ezifanelekileyo zinikezelwa ukulungiselela iifilimu ezicocekileyo. I-reactive sputtering ifumene ingqwalasela eyongeziweyo kwiminyaka yakutshanje kwaye iye yaba yeyona ndlela iphambili yokunciphisa iifilimu ezibhityileyo zeekhompawundi ezahlukeneyo zokusebenza. Isetyenziswe ngokubanzi ekwenzeni i-IV, i-I- kunye ne-IV-V i-compounds, i-semiconductors ye-refractory, kunye neentlobo ze-oxides, ezifana nokusetyenziswa kwe-polycrystalline Si kunye ne-CH./Ar umxube wegesi ukudubula imvula yeefilimu ze-SiC ezincinci, i-Ti target kunye ne-N / Ar yokulungiselela iifilimu ezinzima ze-TiN, i-Ta kunye ne-O / Ar ukulungiselela i-TaO; iifilimu ezibhityileyo ze-dielectric, i-Fe kunye ne-O, / i-Ar ukulungiselela -FezO; -FezO. iifilimu zokurekhoda, iifilimu ze-AIN piezoelectric kunye ne-A1 kunye ne-N / Ar, iifilimu ze-A1-CO ezikhethiweyo zokufunxa nge-AI kunye ne-CO / Ar, kunye neefilimu ze-YBaCuO-superconducting kunye ne-Y-Ba-Cu kunye ne-O / Ar, phakathi kwabanye.
–Eli nqaku likhutshwa nguumenzi womatshini wokugqumaGuangdong Zhenhua
Ixesha lokuposa: Jan-18-2024

