Njengoba ama-chip namadivayisi kagesi eqhubeka nokuthuthuka ekunciphisweni nasekuhlanganisweni okuphezulu, ukwenziwa kwesekethe kuphela ebusweni be-substrate ze-ceramic akusakwazi ukuhlangabezana nezidingo zokuxhumanisa nokuqondisa ezidinga kakhulu. Ngakho-ke ama-Microvia ayadingeka ukuxhumanisa ngogesi izinhlangothi zangaphambili nangemuva ze-substrate, kufinyezwe izindlela zokuxhumanisa futhi kwandiswe ubuningi besekethe. Ngenxa yalokho, i-DPC (Direct Plated Copper) ngobuchwepheshe be-metallization iye yasetshenziswa kabanzi ezisetshenziswayo kufaka phakathi ama-LED, ama-laser, ukuxhumana kwe-optical, amadivayisi e-RF, kanye nama-electronics anamandla.
Kodwa-ke, ama-substrate e-ceramic avikela ngogesi ngokwemvelo. Ukwakha ama-microvia nge-substrate akusho ukuthi ugesi uyaqhubeka phakathi kwezinhlangothi ezimbili. Inselele yangempela ukwakha ungqimba lwembewu yensimbi oluqhubekayo noluthembekile ezindongeni zangaphakathi zama-microvia.
1. Ukuqhubeka Kukagesi Kusungulwa Kanjani Nge-Ceramic Microvias?
I-DPC ngokusebenzisa i-metallization ngokuvamile iqala ngokubhoboza nge-laser ukuze kwakheke ama-microvia ku-substrate ye-ceramic, ngokuvamile ngesimo semigodi egobile noma eqondile. Ama-microvia kanye nobuso be-substrate kuyahlanzwa kahle futhi kukhishwe ugesi ukuze kususwe izinsalela zokubhoboza, umswakama, kanye nokunye ukungcola. Inqubo yokubhoboza nge-vacuum isetshenziswa kamuva ukufaka ungqimba lokunamathela lwe-Ti, ngokuvamile oluyi-50-200 nm ubukhulu, kulandelwe ungqimba lwembewu oluqhuba i-Cu, ngokuvamile oluyi-0.5-2 μm ubukhulu, ebusweni be-substrate kanye nasezindongeni zangaphakathi zama-microvia.
Isendlalelo se-Ti sisebenza njengesendlalelo sokunamathela ukuze kuthuthukiswe amandla okubopha phakathi kwefilimu yensimbi kanye ne-ceramic substrate, kuyilapho isendlalelo sembewu ye-Cu sinikeza isisekelo esiqhubekayo sokuqhuba i-electroplating esilandelayo. Isendlalelo sethusi sakhiwa ngokwengeziwe ngokufaka i-electroplating, ngokuvamile sibe ugqinsi oluyi-5-20 μm, ekugcineni sisungula ukuqhubeka kukagesi okuthembekile phakathi kwamasekethe angaphambili nangemuva nge-vias ezenziwe ngensimbi. Ngamagama alula, ukufaka i-vacuum sputtering kunikeza isisekelo sokuqhuba i-conductive, kuyilapho ukufaka i-electroplating okulandelayo kwakha ugqinsi lwethusi, ngaleyo ndlela kunciphisa ngokumelana nokuthuthukisa ukuthembeka kokuxhumana.
Nakuba inqubo ibonakala ilula, ukuthembeka ngokusebenzisa ukuxhumana kuncike esidingweni esisodwa esibalulekile: ungqimba lwembewu ye-Ti/Cu kumele lumboze ngokuphelele nangokuqhubekayo ubuso be-substrate kanye nodonga lonke lwangaphakathi lwe-microvia ngayinye.
2. Izinselele Ezine Eziyinhloko Zokufaka Izendlalelo Zembewu Ye-Vacuum Sputtering Ti/Cu ze-DPC Vias
Ukwakha ungqimba lwembewu oluqhubekayo ngaphakathi kwama-microvia amancane akulula neze. Izinsalela ezisele ngaphakathi kwama-via zingonakalisa ukunamathela kwefilimu, kuyilapho i-geometry ye-microvia yenza ukumbozwa kodonga oluseceleni kube nzima nakakhulu. Ukungaqhubeki kwendawo kungqimba lwembewu kungaphazamisa ukufakwa kwe-electroplating okulandelayo, kuyilapho ukuhlukahluka phakathi kwezindawo ezahlukene ze-substrate kanye namaqoqo okukhiqiza kungathinta ukuzinza kwenqubo iyonke. Izinselele ezibalulekile zokufaka i-vacuum sputtering ye-DPC nge-metallization zingafingqwa ezindaweni ezine.
1. Izinsalela Ezingaphakathi Kwezingqimba Zingaphazamisa Ukunamathela Kwefilimu
Ngemva kokubhoboza nge-laser, ama-substrate e-ceramic angaqukatha izinhlayiya ze-ceramic, izinto ezibunjiwe kabusha, udoti wokubhoboza, kanye nomswakama ofakwe ngaphakathi kwama-microvia. Kuma-microvia anobubanzi obuncane kanye nezilinganiso eziphezulu, lawa masalela avame ukuba nzima kakhulu ukuwasusa kunokungcola kwendawo. Uma ukuhlanza nokukhipha igesi kunganele, ungqimba lokunamathela lwe-Ti lungase lungakhi isibopho esiqinile nesithembekile nodonga oluseceleni lwe-ceramic. Amaphutha anjalo angase angabonakali ngokushesha ngemva kokumboza, kodwa angathuthuka kancane kancane abe ama-blister kanye ne-delaniation ngesikhathi sokubhoboza nge-electroplating, soldering, noma ukusebenza kwezinga lokushisa eliphezulu.
2. Izilinganiso Eziphezulu Zesici Zenza Ukumbozwa Kwezinhlangothi Kube Nzima Kakhulu
Ubunzima bokubhoboza kwe-microvia abukwazi ukuhlolwa kuphela ngokujula kwayo; isilinganiso esiphakathi kokujula kanye nobubanzi—isilinganiso sesici—sibaluleke ngokulinganayo. Isibonelo, i-via enobubanzi obungu-60 μm kanye nokujula okungu-300 μm inesilinganiso sesici esingu-5:1. Njengoba isilinganiso sesici sanda, ukungena kwe-via kudala umthunzi omkhulu wejometri wezinhlayiya ezibhobozekile, kunciphisa inani lezinhlayiya ezingafinyelela engxenyeni ephakathi yodonga oluseceleni. Lokhu kungabangela amafilimu aminyene ebusweni be-substrate kanye naseduze kokuvulwa kwe-via, kuyilapho ingxenye ephakathi yodonga oluseceleni lwe-via iba mncane kakhulu noma ingaqhubeki.
3. Ungqimba Lwembewu Olungaphelele Lungavimbela Ukuxhumana Okuthembekile
Isidingo esiyisisekelo se-DPC ngokusebenzisa i-metallization akusikho nje ukuthi ithusi likhona yini odongeni lwe-via, kodwa ukuthi ngabe ungqimba lwembewu ye-Ti/Cu lunganwebeka ngokuqhubekayo kusukela ohlangothini olungaphambili lwe-substrate, kulo lonke udonga oluseceleni, luye ohlangothini olungemuva. Ngisho nokungaqhubeki okuncane kungqimba lwembewu kungaphazamisa indlela yokuqhuba edingekayo ekufakweni kwe-electroplating okulandelayo. Ngakho-ke, ikhwalithi yengqimba yembewu ayikwazi ukuhlolwa kuphela ngokubukeka kwendawo noma ubukhulu befilimu obumaphakathi. Ukunaka okukhethekile kumele kunikezwe ingxenye encane kakhulu yodonga oluseceleni oluseceleni oluseceleni nokuthi ngabe ugesi oqhubekayo uyagcinwa yini kuyo yonke indlela eyenziwe ngensimbi.
4. Ukudlulisa Isampula Eyodwa Akuqinisekisi Ukuzinza Kweqembu Elilodwa
Ukufinyelela ubukhulu befilimu engaphezulu obudingekayo kusampula eyodwa akusho ukuthi inqubo isilungele ukukhiqizwa ngobuningi. Ukukhiqizwa kwe-DPC kudinga nokulawulwa okuqinile kokufana kokumboza phakathi kobuso bangaphambili nangemuva, phakathi kwezifunda eziphakathi nezisemaphethelweni ze-substrate, ezindaweni ezahlukene zokufakelwa, kanye nokusuka ku-batch kuya ku-batch. Kuma-substrate e-ceramic aqukethe inani elikhulu lama-microvia, ukuhlolwa kwenqubo akufanele kugxile kuphela ekujikeni kwefilimu okumaphakathi. Okubaluleke kakhulu, isifunda esincane kakhulu se-sidewall nge-via kumele silondoloze njalo ukuhanjiswa kukagesi okudingekayo ukuze kufakwe i-electroplating elandelayo.
3. Kwenzekani Uma Ungqimba Lwembewu Lungafakwanga Kahle?
Isendlalelo sembewu ye-Ti/Cu sinikeza isisekelo esiqhubayo esidingekayo ekufakweni kwe-electroplating okulandelayo. Uma isendlalelo sembewu esiseceleni kwe-via sincane kakhulu, singamboziwe ngokuphelele, noma siqukethe ukungaqhubeki, ugesi we-electroplating awukwazi ukudluliselwa ngokuqhubekayo eceleni, futhi ama-ion ethusi awakwazi ukuncishiswa kahle futhi abekwe ezindaweni ezinephutha. Njengoba ukufakwa kwe-electroplating kuqhubeka futhi isendlalelo sethusi sanda, ekuqaleni izindawo ezincane zokumbozwa okunganele zingaba yizikhala zethusi, ukuntuleka kobukhulu bendawo, noma ukufakwa okungaqhubeki ngaphakathi kwe-via.
Lezi ziphambeko zithinta ngqo ikhwalithi yokuxhumana kwamasekethe ezinhlangothini zangaphambili nangemuva ze-ceramic substrate. Ezimweni ezingatheni kangako, zingabangela ukwanda ngokumelana, ukukhiqizwa kokushisa kwendawo, kanye nokushintshashintsha kokusebenza kukagesi. Ezimweni ezibucayi kakhulu, amasekethe ezinhlangothini zombili angase ahluleke ukufeza ukuqhubeka kukagesi. Ngesikhathi sokufakelwa kwe-solder okulandelayo, ukuguga kwezinga lokushisa eliphezulu, noma ukujikeleza kokushisa, izindawo ezinephutha zingase zithuthuke kakhulu, zihlukanise, noma ziqhekeke, zinciphise isivuno somkhiqizo kanye nokuthembeka kwesikhathi eside futhi okungenzeka kuholele ekwehlulekeni kwedivayisi.
4. Isixazululo Sokukhiqiza I-Vacuum SikaZhenhua Se-Ceramic Substrate Nge-Metallization — Umugqa Wokukhiqiza I-Vacuum Coating We-DPC Ceramic Substrate
Izinzuzo Zemishini:
Ukuzenzakalela: Uhlelo lokudlulisa olusebenza ngokuzenzakalelayo kanye nolwesiphathi somsebenzi lunciphisa ukungenelela ngesandla ngenkathi luthuthukisa ukusebenza kahle kokukhiqiza futhi lufinyeza isikhathi somjikelezo wonke.
Umthamo: Isekela ama-substrate angu-120 mm × 120 mm anamandla okukhiqiza afinyelela kuma-pcs angu-288 ngehora.
Ukusebenza: Kuthuthukisa ukuhanjiswa kukagesi ngenkathi kuthuthukiswa ukusebenza kokushabalalisa ukushisa kwe-substrate ye-ceramic.
Nge-Metallization: Ukucushwa kwensimu yamagnetic okwenziwe kahle kuvumela ukumbozwa kokugqoka okusebenzayo nokufanayo ngaphakathi kwama-microvia.
Inqubo: Isekela ukugqoka okunezinhlangothi ezimbili ukuze kuthuthukiswe ukufana kobukhulu befilimu kanye nokuvumelana kokugqoka.
Izicelo:
Imishini ingabeka izinhlobo ezahlukene zamafilimu ensimbi ayisisekelo, okuhlanganisa i-Ti, i-Cu, i-Al, i-Sn, i-Cr, i-Ag, ne-Ni, futhi isetshenziswe kabanzi embonini yezingxenye ze-semiconductor neze-elekthronikhi kwizicelo ezifana nezingxenye ze-ceramic, ama-capacitor e-ceramic, kanye namaphakheji/izisekeli ze-ceramic ze-LED.
5. Isiphetho
I-Zhenhua Vacuum igxile enqubweni yokuphalaza i-vacuum engaphambili yokukhiqiza i-DPC. Ngokuthuthukisa ukumbozwa kwe-microvia sidewall kanye nokuhlanganisa ubuchwepheshe bokumboza obunezinhlangothi ezimbili nokukhiqizwa okuzenzakalelayo, ikhambi lihlinzeka ngezendlalelo zembewu ze-Ti/Cu ezizinzile zokufakelwa kwe-electroplating okulandelayo kanye nokuthembeka ngokuxhumeka. Lokhu kusiza amakhasimende ukufeza ukukhiqizwa kwesisindo okuqhubekayo ngenkathi kusekelwa ukwamukelwa okubanzi kwe-DPC ceramic substrates kuzinhlelo zokusebenza ze-semiconductor kanye ne-elekthronikhi ezithuthukisiwe.
-Lesi sihloko sishicilelwe ngu umenzi wemishini yokumboza nge-vacuumI-Zhenhua Vacuum
Isikhathi sokuthunyelwe: Agasti-27-2026