Njengoko iitships kunye nezixhobo ze-elektroniki ziqhubeka nokutshintsha zibe yi-miniaturization kunye nokuhlanganiswa okuphezulu, ukwenziwa kweesekethe kuphela kumphezulu we-ceramic substrates akusakwazi ukuhlangabezana neemfuno zokudibanisa kunye nokuhambisa ezifuna kakhulu. Ke ngoko ii-Microvias ziyafuneka ukuze zidibanise ngombane amacala angaphambili nangasemva e-substrate, zifinyeze iindlela zokudibanisa kunye nokwandisa uxinano lweesekethe. Ngenxa yoko, i-DPC (Direct Plated Copper) ngetekhnoloji yokwenza isinyithi iye yasetyenziswa kakhulu kwizicelo eziquka ii-LED, ii-laser, unxibelelwano lwe-optical, izixhobo ze-RF, kunye ne-electronics zamandla.
Nangona kunjalo, ii-substrates zeseramikhi zikhusela ngombane ngokwemvelo. Ukwenza nje ii-microvias nge-substrate akubonisi ukuqhubeka kombane phakathi kwamacala omabini. Umngeni wokwenene kukwenza umaleko wembewu yesinyithi oqhubekayo nothembekileyo ecaleni kweendonga zangaphakathi zee-microvias.
1. Uqhubekeko Lombane Lumiselwa Njani NgeeMicrovia ZeCeramic?
I-DPC ngokusebenzisa i-metallization idla ngokuqala ngokugrumba nge-laser ukwenza ii-microvias kwi-ceramic substrate, ngokubanzi ngendlela yemingxunya ethe tyaba okanye ethe tye. Ii-microvias kunye nomphezulu we-substrate emva koko zicocwa kakuhle kwaye zikhutshwe igesi ukuze kususwe iintsalela zokugrumba, umswakama, kunye nezinye izinto ezingcolisayo. Inkqubo yokutshiza nge-vacuum emva koko isetyenziselwa ukufaka umaleko wokunamathela we-Ti, oqhele ukuba yi-50–200 nm ubukhulu, ulandelwe ngumaleko wembewu oqhuba i-Cu, oqhele ukuba yi-0.5–2 μm ubukhulu, kumphezulu we-substrate kunye neendonga zangaphakathi zee-microvias.
Umaleko we-Ti usebenza njengomaleko wokuncamathelisa ukuphucula amandla okubopha phakathi kwefilimu yesinyithi kunye ne-ceramic substrate, ngelixa umaleko wembewu ye-Cu ubonelela ngesiseko esiqhubekayo sokuqhuba umbane kwi-electroplating elandelayo. Umaleko wethusi emva koko wakhiwa ngokufaka umbane, ngokuqhelekileyo ukuya kubukhulu be-5-20 μm, ekugqibeleni useka ukuqhubeka kombane okuthembekileyo phakathi kweesekethe ezikumacala angaphambili nangasemva nge-vias ezenziwe ngesinyithi. Ngamazwi alula, ukutshiza nge-vacuum sputtering kubonelela ngesiseko sokuqhuba umbane, ngelixa ukuphosa emva koko kwakha ubukhulu bethusi, ngaloo ndlela kunciphisa ngokuxhathisa kwaye kuphucule ukuthembeka kokunxibelelana.
Nangona le nkqubo ibonakala ilula, ukunxibelelana okuthembekileyo kuxhomekeke kwinto enye ebalulekileyo: umaleko wembewu yeTi/Cu kufuneka ugubungele ngokupheleleyo nangokuqhubekayo umphezulu wesiseko kunye nodonga lonke lwangaphakathi lwe-microvia nganye.
2. Imingeni emine ephambili yokubeka i-vacuum sputtering Ti/Cu Seed Layers kwi-DPC Vias
Ukwenza umaleko wembewu oqhubekayo ngaphakathi kwee-microvias ezimxinwa akulula kwaphela. Iintsalela ezisele ngaphakathi kwee-vias zinokuphazamisa ukunamathela kwefilimu, ngelixa i-geometry ye-microvia yenza kube nzima ngakumbi ukugubungela udonga olusecaleni. Ukungaqhubeki kwendawo kumaleko wembewu kunokuphazamisa ukufakelwa kwe-electroplating okulandelayo, ngelixa umahluko phakathi kweendawo ezahlukeneyo ze-substrate kunye neebhetshi zemveliso kunokuchaphazela uzinzo lwenkqubo iyonke. Imingeni ephambili yokutshiza nge-vacuum kwi-DPC nge-metallization inokushwankathelwa kwiindawo ezine.
1. Iintsalela ezingaphakathi kwiVias zinokuphazamisana nokunamathela kwifilimu
Emva kokubhola nge-laser, ii-ceramic substrates zinokuba nee-ceramic particles, izinto ezilungisiweyo, i-drilling debris, kunye nokufuma okufunxwayo ngaphakathi kwee-microvias. Kwii-microvias ezinobubanzi obuncinci kunye nomlinganiselo ophezulu, ezi ntsalela zihlala zinzima kakhulu ukuzisusa kunongcoliseko lomphezulu. Ukuba ukucoca kunye nokukhupha igesi akwanelanga, umaleko wokunamathela we-Ti usenokungabi yikhonkco eliqinileyo nelithembekileyo nodonga lwe-ceramic. Ezi ziphene zisenokungabonakali kwangoko emva kokugquma, kodwa zinokukhula kancinci zibe ngamadyungudyungu kunye nokwahlukana ngexesha lokufakelwa kwe-electroplating, i-soldering, okanye ukusebenza kobushushu obuphezulu.
2. Umlinganiselo ophezulu weMpawu wenza kube nzima ngakumbi ukugubungela icala elisecaleni
Ubunzima bokutshiza kwe-microvia abunakuvavanywa kuphela ngobunzulu bayo; umlinganiselo ophakathi kobunzulu kunye nobubanzi—umlinganiselo wophawu—ubaluleke ngokulinganayo. Umzekelo, i-via enobubanzi obuyi-60 μm kunye nobunzulu obuyi-300 μm inomlinganiselo wophawu oyi-5:1. Njengoko umlinganiselo wophawu usanda, i-via entry idala umthunzi omkhulu wejometri wee-sputtered particles, nto leyo enciphisa inani lee-particles ezinokufikelela kwicandelo eliphakathi lodonga olusecaleni. Oku kunokubangela iifilimu ezixineneyo kumphezulu we-substrate kunye kufutshane nokuvulwa kwe-via, ngelixa icandelo eliphakathi lodonga olusecaleni lwe-via liba lincinci kakhulu okanye lingaqhubeki.
3. Umaleko weMbewu ongaphelelanga unokuthintela ukuqhagamshelwa okuthembekileyo ngokusebenzisa unxibelelwano
Imfuneko esisiseko ye-DPC ngokusebenzisa i-metallization ayikokuba nje ikho ubhedu lukhona eludongeni lwe-via, kodwa kukuba ingaba umaleko wembewu ye-Ti/Cu unokolula ngokuqhubekayo ukusuka kwicala elingaphambili le-substrate, kulo lonke udonga oluhamba ngecala, ukuya kwicala elingasemva. Nokuba ukungaqhubeki okuncinci kumaleko wembewu kunokuphazamisa indlela yokuqhuba efunekayo kwi-electroplating elandelayo. Ke ngoko, umgangatho womaleko wembewu awunakuvavanywa kuphela ngokubonakala komphezulu okanye ubukhulu obuphakathi befilimu. Ingqwalasela ekhethekileyo kufuneka inikwe kwicandelo elincinci lodonga oluhamba ngecala kunye nokuba ingaba umbane oqhubekayo ugcinwa kuyo yonke indlela eyenziwe ngesinyithi.
4. Ukuphumelela iSampuli enye akuqinisekisi uzinzo lweBatch-to-Batch
Ukufikelela kubukhulu obufunekayo befilimu yomphezulu kwisampulu enye akuthethi ukuba inkqubo ilungele ukuveliswa ngobuninzi. Ukwenziwa kwe-DPC kukwafuna ulawulo oluqinileyo lokufana kwengubo phakathi komphezulu ongaphambili nowangasemva, phakathi kwemimandla esembindini nomphetho we-substrate, kwiindawo ezahlukeneyo zokufakelwa, kunye nebhetshi ukuya kwibhetshi. Kwi-substrates ze-ceramic eziqulethe inani elikhulu le-microvias, uvavanyo lwenkqubo akufuneki lugxile kuphela kubukhulu befilimu obuphakathi. Okubaluleke ngakumbi, ummandla obhityileyo we-sidewall nge-via kufuneka uhlale ugcina umbane ofunekayo kwi-electroplating elandelayo.
3. Kwenzeka ntoni xa umaleko wembewu ungafakwanga kakuhle?
Umaleko wembewu yeTi/Cu ubonelela ngesiseko esiqhubayo esifunekayo kwi-electroplating elandelayo. Ukuba umaleko wembewu ecaleni kwendlela ubhityile kakhulu, awugqunywanga ngokupheleleyo, okanye une-discontinuities, i-electroplating current ayinakudluliselwa rhoqo ecaleni kwendlela, kwaye ii-ion ze-copper azinakuncitshiswa ngokufanelekileyo kwaye zibekwe kwiindawo ezineziphene. Njengoko i-electroplating iqhubeka kwaye umaleko we-copper uqokelelana, ekuqaleni iindawo ezincinci zokugubungela okunganelanga zinokukhula zibe zi-voids ze-copper-layer, ukungabikho kobukhulu bendawo, okanye i-discontinuous plating ngaphakathi kwendlela.
Ezi ziphene zichaphazela ngokuthe ngqo umgangatho wokunxibelelana kweesekethe kumacala angaphambili nangasemva e-ceramic substrate. Kwiimeko ezingenzima kangako, zinokubangela ukwanda ngokuxhathisa, ukuveliswa kobushushu kwindawo ethile, kunye nokuguquguquka kokusebenza kombane. Kwiimeko ezinzulu ngakumbi, iisekethe kumacala omabini zisenokungaphumeleli ukufezekisa ukuqhubeka kombane. Ngexesha lokudityaniswa kwe-solder okulandelayo, ukuguga kobushushu obuphezulu, okanye ukujikeleza kobushushu, iindawo ezineziphene zinokubangela ukuqhekeka ngakumbi, ukuqhekeka kwesekethe, okanye ukuqhekeka kwesekethe, ukunciphisa isivuno semveliso kunye nokuthembeka kwexesha elide kwaye okunokubangela ukungaphumeleli kwesixhobo.
4. Isisombululo seMveliso ye-Zhenhua Vacuum kwi-Ceramic Substrate nge-Metallization — DPC Ceramic Substrate Vacuum Coating Production Line
Iingenelo zezixhobo:
Ukuzenzekelayo: Inkqubo yokudlulisa izinto ezisebenza ngokuzenzekelayo kunye nenkqubo yokudlulisa izinto ezisebenza ngokuzenzekelayo inciphisa ukungenelela ngesandla ngelixa iphucula ukusebenza kakuhle kwemveliso kwaye inciphisa ixesha lomjikelo ngokubanzi.
Ubungakanani bokusebenza: Ixhasa ii-substrates eziyi-120 mm × 120 mm ezinomthamo wemveliso ofikelela kwi-288 pcs ngeyure.
Ukusebenza: Kuphucula ukuhanjiswa kombane ngelixa kuphucula ukusebenza kokusasazwa kobushushu kwesiseko seseramikhi.
Nge-Metallization: Uqwalaselo lwe-magnetic-field olulungiselelweyo lwenza ukuba ukugubungela okusebenzayo nokufanayo kwengubo ngaphakathi kwee-microvias kube lula.
Inkqubo: Ixhasa ukugqoka okumacala amabini ukuphucula ukufana kwefilimu kunye nokuhambelana kokugqoka.
Izicelo:
Ezi zixhobo zinokubeka iintlobo ngeentlobo zeefilimu zesinyithi ezisisiseko, kuquka iTi, iCu, iAl, iSn, iCr, iAg, kunye neNi, kwaye zisetyenziswa kakhulu kumashishini e-semiconductor kunye ne-electronic component kwizicelo ezifana ne-ceramic substrates, i-ceramic capacitors, kunye neepakeji/inkxaso ze-ceramic ze-LED.
5. Isiphelo
I-Zhenhua Vacuum igxile kwinkqubo yokutshiza i-vacuum engaphambili kwimveliso ye-DPC. Ngokuphucula ukugubungela icala le-microvia kunye nokudibanisa iteknoloji yokugquma enamacala amabini kunye nemveliso ezenzekelayo, isisombululo sibonelela ngezakhelo zembewu ze-Ti/Cu ezizinzileyo zokufakelwa kwe-electroplating okulandelayo kunye nokuthembeka ngokudibanisa. Oku kunceda abathengi ukuba bafezekise imveliso yobuninzi rhoqo ngelixa bexhasa ukwamkelwa ngokubanzi kwe-DPC ceramic substrates kwizicelo ze-semiconductor kunye ne-elektroniki eziphambili.
-Eli nqaku lipapashwe ngu umenzi wezixhobo zokugquma nge-vacuumI-Zhenhua Vacuum
Ixesha leposi: Agasti-27-2026