Ubuchwepheshe Bokufaka I-Ion Beam

① Ubuchwepheshe bokufaka i-ion beam assisted beam bubonakala ngokunamathela okuqinile phakathi kwefilimu kanye ne-substrate, ungqimba lwefilimu luqinile kakhulu. Ukuhlolwa kubonise ukuthi: ukunamathela kwe-ion beam assisted beam of adhesion kunokuthi ukunamathela kwe-thermal vapor deposition kwanda izikhathi eziningana kuya emakhulwini ezikhathi, isizathu sibangelwa kakhulu yi-ion bombardment ebusweni bomphumela wokuhlanza, ukuze i-interface yesisekelo se-membrane yakhe isakhiwo se-gradient interfacial, noma ungqimba lokuguquguquka oluhlanganisiwe, kanye nokunciphisa ukucindezeleka kwe-membrane.

② Ukufakwa kwe-ion beam okusizwa yi-ion kungathuthukisa izakhiwo zemishini zefilimu, kwandise impilo yokukhathala, kufaneleka kakhulu ekulungiseleleni ama-oxide, ama-carbide, i-cubic BN, i-TiB: kanye nezingubo ezifana nedayimane. Isibonelo, ku-1Crl8Ni9Ti insimbi engamelani nokushisa ekusetshenzisweni kobuchwepheshe bokufakwa kwe-ion beam-assisted ukuze ikhule i-200nm SiN, ifilimu encane, hhayi nje kuphela engavimbela ukuvela kwemifantu yokukhathala ebusweni bezinto ezibonakalayo, kodwa futhi inganciphisa kakhulu izinga lokusabalalisa imifantu yokukhathala, ukuze kwandiswe impilo yayo inendima enhle.

③ Ukufakwa kwe-ion beam okusizwa yi-ion kungashintsha uhlobo lokucindezeleka kwefilimu kanye noshintsho lwesakhiwo sayo sekristalu. Isibonelo, ukulungiswa kwefilimu ye-Cr ene-11.5keV Xe + noma i-Ar + ukuqhunyiswa kwe-substrate ebusweni, kutholakale ukuthi ukulungiswa kwezinga lokushisa le-substrate, amandla e-ion okuqhunyiswa yi-bombardment, isilinganiso sokufika kwe-ion kanye ne-athomu kanye neminye imingcele, kungenza ukucindezeleka kusuka ekucindezelweni kuya ekucindezelweni, isakhiwo sekristalu sefilimu sizophinde sikhiqize izinguquko. Ngaphansi kwesilinganiso esithile sama-ion kuma-athomu, ukufakwa kwe-ion beam okusizwa yi-ion kunokuqondisa okungcono okukhethayo kunesendlalelo se-membrane esifakwe yi-thermal vapor deposition.

④ Ukufakwa kwe-ion beam okusizwa ukubekwa kungathuthukisa ukumelana nokugqwala kanye nokumelana nokugqwala kwe-membrane. Njengoba ukufakwa kwe-ion beam okusizwa ukubekwa kwengqimba ye-membrane kukhulu, ukuthuthukiswa kwesakhiwo se-interface yesisekelo se-membrane noma ukwakheka kwesimo esingaguquki okubangelwa ukunyamalala komngcele wokusanhlamvu phakathi kwezinhlayiya, okusiza ekuthuthukiseni ukumelana nokugqwala kanye nokumelana nokugqwala kwezinto.

Thuthukisa ukumelana nokugqwala kwezinto futhi umelane nomphumela we-oxidizing wokushisa okuphezulu.

(5) Ukufakwa kwe-ion beam okusizwa yi-ion kungashintsha izakhiwo ze-electromagnetic zefilimu futhi kuthuthukise ukusebenza kwamafilimu amancane abonakalayo. (6) Ukufakwa kwe-ion okusizwa yi-ion kuvumela ukukhula kwamafilimu amancane ahlukahlukene emazingeni okushisa aphansi futhi kugwema imiphumela emibi ezintweni noma ezingxenyeni ezinembile ezingabangelwa ukwelashwa emazingeni okushisa aphezulu, njengoba amapharamitha ahlobene nokufakwa kwe-athomu kanye nokufakelwa kwe-ion angalungiswa ngokunembile nangokuzimele, futhi ukumbozwa kwama-micrometer ambalwa anokwakheka okufanayo kungakhiqizwa ngokuqhubekayo ngamandla aphansi okuqhumisa.