① Iteknoloji yokufakwa kwe-ion beam encediswa yi-ion beam ibonakaliswa kukunamathelana okunamandla phakathi kwefilimu kunye ne-substrate, umaleko wefilimu unamandla kakhulu. Uvavanyo lubonise ukuba: ukunamathelana komphunga oshushu kuncediswa yi-ion beam, ukunamathelana komphunga oshushu kunyuke amaxesha amaninzi ukuya kumakhulu amaxesha, isizathu sibangelwa ikakhulu yi-ion bombardment kumphezulu wesiphumo sokucoca, ukuze i-interface yesiseko se-membrane ibe yi-gradient interfacial structure, okanye umaleko wenguqu ye-hybrid, kunye nokunciphisa uxinzelelo lwe-membrane.
② I-ion beam assisted deposition inokuphucula iimpawu zoomatshini zefilimu, yandise ubomi bokudinwa, ifanelekile kakhulu ekulungiseleleni ii-oxides, ii-carbides, ii-cubic BN, ii-TiB: kunye neengubo ezifana nedayimani. Umzekelo, kwi-1Crl8Ni9Ti intsimbi engatshisi ubushushu ekusebenziseni ubuchwepheshe bokufaka i-ion assisted beam ukuze ikhule i-200nm SiN, ifilimu encinci, ayinakuthintela kuphela ukuvela kweentanda zokudinwa phezu komphezulu wezinto, kodwa inokunciphisa kakhulu izinga lokusasazwa kweentanda zokudinwa, ukwandisa ubomi bayo inendima elungileyo.
③ Ukufakwa kwe-ion beam assisted deposition kunokutshintsha uhlobo loxinzelelo lwefilimu kunye notshintsho kwisakhiwo sayo sekristale. Umzekelo, ukulungiswa kwefilimu yeCr ene-11.5keV Xe + okanye i-Ar + bombardment yomphezulu we-substrate, kwafunyaniswa ukuba ukulungiswa kobushushu be-substrate, amandla e-bombardment ion, umlinganiselo wokufika kwe-ion kunye ne-atom kunye nezinye iiparameter, kunokwenza uxinzelelo ukusuka ekuxinezelekeni ukuya ekucinezeleni, isakhiwo sekristale sefilimu siya kuvelisa utshintsho. Phantsi komlinganiselo othile wee-ion kwiiathom, ukufakwa kwe-ion beam assisted deposition kunokhetho olungcono kunomaleko we-membrane obekwe yi-thermal vapor deposition.
④ Ukufakwa kwe-ion beam assisted deposition kunokunyusa ukumelana nokugqwala kunye nokumelana nokugqwala kwe-membrane. Njengoko ukufakwa kwe-ion beam assisted deposition yomaleko we-membrane kuxinene, ukuphuculwa kwesakhiwo se-membrane base interface okanye ukwakheka kwe-amorphous state okubangelwa kukuphela komda weenkozo phakathi kwamasuntswana, nto leyo enceda ekuphuculeni ukumelana nokugqwala kunye nokumelana nokugqwala kwezinto.
Yonyusa ukumelana nokugqwala kwezinto kwaye imelane nefuthe lokuxovula lobushushu obuphezulu.
(5) Ukufakwa kwe-ion beam okuncediswa yi-ion kunokutshintsha iipropati ze-electromagnetic zefilimu kwaye kuphucule ukusebenza kweefilimu ezincinci ze-optical. (6) Ukufakwa kwe-ion okuncediswa yi-ion kuvumela ukukhula kweefilimu ezahlukeneyo ezincinci kumaqondo obushushu aphantsi kwaye kuthintela iziphumo ezimbi kwizixhobo okanye kwiindawo ezichanekileyo eziya kubangelwa lunyango kumaqondo obushushu aphezulu, kuba iiparameter ezinxulumene nokufakwa kwe-athomu kunye nokufakelwa kwe-ion zinokulungiswa ngokuchanekileyo nangokuzimeleyo, kwaye ukufakelwa kwee-micrometer ezimbalwa ezinokwakheka okufanayo kunokuveliswa rhoqo ngamandla aphantsi e-bombardment.
Ixesha leposi: Matshi-07-2024