Metal organic chemical vapor deposition (MOCVD), the source of gaseous material is metal organic compound gas, and the basic reaction process of deposition is similar to CVD.
1.MOCVD raw gas
The gaseous source used for MOCVD is metal-organic compound (MOC) gas. Metal-organic compounds are stable compounds produced by combining organic substances with metals. Organic compounds have alkyl, aromatic. Alkyl include methyl, ethyl, propyl, and butyl. Alkyl include methyl, ethyl, propyl, and butyl. Aromatic including phenyl homologues, trimethyl gallium, [Ga(CH3)3], trimethyl aluminum [Al(CH3)3] for the deposition of microelectronics, optoelectronics, semiconductors in the three, five compounds in the film layer, such as Ga(CH3)3 and ammonia can be in the silicon wafer or sapphire on the epitaxial growth of LED lamps in the InGaN luminescent layer. LED lamps are more than tungsten incandescent energy-saving 90%, more than 60% energy-saving fluorescent lamps. LED lamps are 90% more energy efficient than tungsten incandescent lamps and 60% more energy efficient than fluorescent lamps. Nowadays, all kinds of street lamps, lighting lamps and automobile lamps basically use LED light-emitting films produced by MOCVD.
2. Deposition temperature
The decomposition temperature of organic metal compounds is low, and the deposition temperature is lower than that of HCVD. The deposition temperature of TiN deposited by MOCVD can be reduced to about 500 degree.
–This article is released by vacuum coating machine manufacturer Guangdong Zhenhua
Post time: Oct-20-2023