Ukufakwa komphunga wamakhemikhali e-Metal organic (MOCVD), umthombo wezinto ezisebenzisa igesi yigesi ehlanganisiwe ye-metal organic, futhi inqubo eyisisekelo yokusabela kokufakwa ifana ne-CVD.
1.MOCVD igesi eluhlaza
Umthombo wegesi osetshenziswa ku-MOCVD yigesi ye-metal-organic compound (MOC). Amakhemikhali e-metal-organic ayizakhi ezizinzile ezikhiqizwa ngokuhlanganisa izinto eziphilayo nezinsimbi. Amakhemikhali e-organic ane-alkyl, i-aromatic. I-Alkyl ifaka i-methyl, i-ethyl, i-propyl, ne-butyl. I-Alkyl ifaka i-methyl, i-ethyl, i-propyl, ne-butyl. Izakhi ezinuka kamnandi kufaka phakathi ama-phenyl homologues, i-trimethyl gallium, [Ga(CH2)3)3], i-trimethyl aluminium [Al(CH2)3)3] ukuze kufakwe ama-microelectronics, ama-optoelectronics, ama-semiconductor kuma-compound amathathu, amahlanu kungqimba lwefilimu, njenge-Ga(CH3)3 futhi i-ammonia ingaba ku-silicon wafer noma i-sapphire ekukhuleni kwe-epitaxial kwezibani ze-LED kungqimba olukhanyayo lwe-InGaN. Izibani ze-LED zingaphezu kokulondoloza amandla kwe-tungsten incandescent okungu-90%, ngaphezu kokungu-60% kwezibani ezikhanyayo ezisindisa amandla. Izibani ze-LED zingcono kakhulu ngo-90% kunezibani ezikhanyayo ze-tungsten kanye no-60% okugcina amandla kangcono kunezibani ezikhanyayo. Namuhla, zonke izinhlobo zezibani zasemgwaqweni, izibani zokukhanyisa kanye nezibani zezimoto zisebenzisa amafilimu akhipha ukukhanya kwe-LED akhiqizwa yi-MOCVD.
2. Izinga lokushisa lokufakwa
Izinga lokushisa lokubola kwamakhemikhali ensimbi ephilayo liphansi, kanti izinga lokushisa lokufakwa kwe-TiN liphansi kunele-HCVD. Izinga lokushisa lokufakwa kwe-TiN elifakwa yi-MOCVD lingancishiswa libe cishe ngama-degree angu-500.
–Lesi sihloko sikhishwe yi-umenzi womshini wokumboza nge-vacuumI-Guangdong Zhenhua
Isikhathi sokuthunyelwe: Okthoba-20-2023

