Ukufakwa komphunga we-metal organic chemical vapor (MOCVD), umthombo wezinto ezisebenzisa igesi yi-metal organic compound gas, kwaye inkqubo esisiseko yokusabela kokufakwa ifana ne-CVD.
1.MOCVD igesi eluhlaza
Umthombo wegesi osetyenziselwa i-MOCVD yigesi ye-metal-organic compound (MOC). Iikhompawundi ze-metal-organic ziikhompawundi ezizinzileyo eziveliswa ngokuhlanganisa izinto eziphilayo neesinyithi. Iikhompawundi ze-organic zine-alkyl, i-aromatic. I-Alkyl iquka i-methyl, i-ethyl, i-propyl, kunye ne-butyl. I-Alkyl iquka i-methyl, i-ethyl, i-propyl, kunye ne-butyl. I-Aromatic iquka ii-phenyl homologues, i-trimethyl gallium, [Ga(CH2)3)3], i-trimethyl aluminium [Al(CH2)3)3] yokubeka ii-microelectronics, ii-optoelectronics, ii-semiconductors kwiikhompawundi ezintathu, ezintlanu kumaleko wefilimu, ezifana ne-Ga(CH3)3 kwaye i-ammonia inokuba kwi-silicon wafer okanye kwi-sapphire ekukhuleni kwe-epitaxial kwezibane ze-LED kumaleko we-InGaN luminescent. Izibane ze-LED zingaphezulu kwe-tungsten incandescent energy-savings 90%, ngaphezulu kwe-60% yezibane ze-fluorescent-savings. Izibane ze-LED zingaphezulu kwe-90% kunezibane ze-tungsten incandescent kunye ne-60% ngaphezulu kunezibane ze-fluorescent. Kule mihla, zonke iintlobo zezibane zesitalato, izibane zokukhanyisa kunye nezibane zeemoto zisebenzisa iifilimu ezikhupha ukukhanya kwe-LED eziveliswa yi-MOCVD.
2. Ubushushu bokubeka
Ubushushu bokubola kwee-organic metal compounds buphantsi, kwaye ubushushu bokubekwa kwe-TiN buphantsi kune-HCVD. Ubushushu bokubekwa kwe-TiN ebekwe yi-MOCVD bunokwehliswa bufikelele kuma-500 degrees.
–Eli nqaku likhutshwe nguumenzi womatshini wokugquma nge-vacuumGuangdong Zhenhua
Ixesha lokuthumela: Okthobha-20-2023