1.Ion beam assisted deposition mainly uses low energy ion beams to assist in surface modification of materials.
(1) Characteristics of ion assisted deposition
During the coating process, the deposited film particles are continuously bombarded by charged ions from the ion source on the surface of the substrate while being coated with charged ion beams.
(2) The role of ion assisted deposition
High energy ions bombard the loosely bound film particles at any time; By transferring energy, the deposited particles gain greater kinetic energy, thereby improving the law of nucleation and growth; Produce a compaction effect on the membrane tissue at any time, making the film grow more densely; If reactive gas ions are injected, a stoichiometric compound layer can be formed on the surface of the material, and there is no interface between the compound layer and the substrate.
2. Ion source for ion beam assisted deposition
The characteristic of ion beam assisted deposition is that the film layer atoms (deposition particles) are continuously bombarded by low energy ions from the ion source on the surface of the substrate, making the film structure very dense and improving the performance of the film layer. The energy E of the ion beam is ≤ 500eV. Commonly used ion sources include: Kauffman ion source, Hall ion source, anode layer ion source, hollow cathode Hall ion source, radio frequency ion source, etc.
Post time: Jun-30-2023