Ukufakwa kwe-ion beam encediswa kukubeka kunye nomthombo we-ion onamandla aphantsi

1. Ukufakwa kwe-ion beam assisted deposition kusebenzisa ikakhulu i-ion beams enamandla aphantsi ukunceda ekuguquleni umphezulu wezinto.

(1) Iimpawu zokufakwa kwe-ion encediswa yi-ion

Ngexesha lenkqubo yokugquma, amasuntswana efilimu agciniweyo ahlala ehlaselwa zii-ion ezitshajiweyo ezivela kumthombo wee-ion kumphezulu we-substrate ngelixa egqunywa ngemiqadi yee-ion ezitshajiweyo.

(2) Indima yokufakwa kwe-ion encediswa kukufakwa

Ii-ions ezinamandla aphezulu zihlasela iinxalenye zefilimu ezibotshelelwe ngokukhululekileyo nangaliphi na ixesha; Ngokudlulisela amandla, iinxalenye ezigciniweyo zifumana amandla amakhulu e-kinetic, ngaloo ndlela ziphucula umthetho we-nucleation kunye nokukhula; Zivelisa impembelelo yokuxinana kwizicubu ze-membrane nangaliphi na ixesha, zenze ifilimu ikhule ngokuxinana; Ukuba ii-ions zegesi ezisebenzayo zifakwa, umaleko we-stoichiometric compound unokwenziwa phezu komphezulu wezinto, kwaye akukho nxibelelwano phakathi komaleko we-compound kunye ne-substrate.

2. Umthombo we-ion wokufaka i-ion beam encediswa kukufakwa

Uphawu lokufakwa kwe-ion beam assisted deposition kukuba ii-athomu zefilimu layer (ii-deposition particles) zihlala zihlaselwa zii-ions zamandla aphantsi ezivela kumthombo we-ion kumphezulu we-substrate, nto leyo eyenza isakhiwo sefilimu sibe xinene kakhulu kwaye siphucula ukusebenza kwefilimu layer. Amandla E e-ion beam yi-≤ 500eV. Imithombo ye-ion esetyenziswa rhoqo ibandakanya: umthombo we-ion ka-Kauffman, umthombo we-ion ka-Hall, umthombo we-ion we-anode layer, umthombo we-cathode engenanto Umthombo we-ion ka-Hall, umthombo we-ion we-radio frequency, njl.njl.