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Characterization of compound thin films prepared by reactive magnetron sputtering

Article source:Zhenhua vacuum
Read:10
Published:23-08-31

Reactive magnetron sputtering means that reactive gas is supplied to react with sputtered particles in the process of sputtering to produce a compound film. It can supply reactive gas to react with the sputtering compound target at the same time, and can also supply reactive gas to react with the sputtering metal or alloy target at the same time to prepare a compound film with a given chemical ratio.The characteristics of reactive magnetron sputtering to prepare compound films are:

 

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(1) The target materials used for reactive magnetron sputtering (single element target or multi-element target) and reaction gases are easy to obtain high purity, which is conducive to the preparation of high-purity compound films.

(2) In reactive magnetron sputtering, by adjusting the deposition process parameters, chemical ratio or non-chemical ratio of compound films can be prepared, so as to achieve the purpose of regulating the film characteristics by adjusting the composition of the film.

(3) The temperature of the substrate is generally not too high during the reactive magnetron sputtering deposition process, and the film forming process usually does not require the substrate to be heated to very high temperatures, so there are fewer restrictions on the substrate material.

(4) Reactive magnetron sputtering is suitable for the preparation of large-area homogeneous thin films, and can achieve industrialized production with an annual output of one million square meters of coating from a single machine. In many cases, the nature of the film can be changed by simply changing the ratio of reactive gas to inert gas during sputtering. For example, the film can be changed from metal to semiconductor or non-metal.

——This article has vacuum coating machine manufacturer Guangdong Zhenhua released


Post time: Aug-31-2023