Ukusetshenziswa kokukhishwa kwe-RF

1. Kuwusizo ekufakeni i-sputtering kanye ne-plating insulation film. Ushintsho olusheshayo ku-electrode polarity lungasetshenziswa ekufakeni i-sputter ngqo ama-insulation target ukuze kutholakale amafilimu okufaka i-insulation. Uma umthombo wamandla we-DC usetshenziswa ukufutha nokufaka ifilimu yokufaka i-insulation, ifilimu yokufaka i-insulation izovimba ama-ion amahle ukuthi angangeni ku-cathode, yakhe ungqimba lokuqongelela ama-ion amahle, oluvame ukuphuka nokusha. Ngemva kokufaka ifilimu yokufaka i-insulation ku-anode, ama-electron ayavinjelwa ukungena ku-anode, okuholela ekutheni i-anode inyamalale. Uma usebenzisa umthombo wamandla we-RF ukumboza ifilimu yokufaka i-insulation, ngenxa ye-polarity eshintshanayo yama-electrode, ama-charge amahle aqongelelwe ku-cathode engxenyeni yokuqala yomjikelezo azoncishiswa ama-electron engxenyeni yesibili yomjikelezo, kanti ama-electron aqongelelwe ku-anode azoncishiswa ama-ion amahle. Inqubo ephambene nomjikelezo wengxenye yesibili yomjikelezo ingasusa ukuqongelela kwama-charge ku-electrode, futhi inqubo yokukhipha ingaqhubeka ngokujwayelekile.

2. Ama-electrode avame kakhulu akhiqiza i-self biasia. Kudivayisi ye-RF enesakhiwo se-electrode esiyisicaba, ama-electrode avame kakhulu kusekethe esebenzisa i-capacitive coupling matching akhiqiza i-self biasia voltage. Umehluko omkhulu phakathi kwesivinini sokufuduka kwama-electron kanye nesivinini sokufuduka kwama-ion ekukhishweni kwenza ama-electron akwazi ukufeza isivinini esikhulu sokunyakaza ngesikhathi esithile, kuyilapho isivinini se-ion esihamba kancane sibangela ukuqongelela. I-electrode evame kakhulu inamandla angemahle engxenyeni enkulu yomjikelezo ngamunye, okuholela ku-voltage engemahle endaweni, okuyisimo se-self biasia ye-electrode evame kakhulu.

I-self bias ekhiqizwa yi-RF discharge electrode isheshisa ukuqhunyiswa kwama-ion kwe-cathode electrode ukuze ikhiphe ama-electron esibili njalo ukuze kugcinwe inqubo yokukhishwa, kanti i-self bias idlala indima efanayo nokwehla kwe-cathode ekukhishweni kokukhanya kwe-DC. Nakuba kusetshenziswa ugesi we-RF, ukukhishwa kungaqina ngenxa ye-self bias voltage ekhiqizwa yi-electrode enemvamisa ephezulu efinyelela ku-500-1000V.

3. Ukukhishwa kwemvamisa yomsakazo kudlala indima ebalulekile ekukhishweni kokukhanya kwengcindezi yomoya kanye nokukhishwa kokukhanya kwesithiyo se-dielectric okufakwe kamuva.