1. Iluncedo kwifilimu yokufutha kunye nokufaka iplati. Utshintsho olukhawulezileyo kwi-polarity ye-electrode lungasetyenziselwa ukufutha ngokuthe ngqo iithagethi zokufutha ukuze kufumaneke iifilimu zokufutha. Ukuba umthombo wamandla we-DC usetyenziselwa ukufutha kunye nokufaka ifilimu yokufutha, ifilimu yokufutha iya kuthintela ii-ions ezintle ukuba zingangeni kwi-cathode, zenze umaleko wokufutha ii-ion ezilungileyo, onokuthi uqhekeke kwaye utshise. Emva kokufaka ifilimu yokufutha kwi-anode, ii-elektroni ziyavalwa ukuba zingangeni kwi-anode, nto leyo ebangela ukuba i-anode iphele. Xa usebenzisa umthombo wamandla we-RF ukugquma ifilimu yokufutha, ngenxa ye-polarity etshintshanayo yee-electrodes, ii-charges ezilungileyo eziqokelelwe kwi-cathode kwisiqingatha sokuqala somjikelo ziya kuncitshiswa zii-elektroni kwisiqingatha sesibini somjikelo, kwaye ii-elektroni eziqokelelwe kwi-anode ziya kuncitshiswa zii-ions ezilungileyo. Inkqubo echaseneyo kumjikelo wesiqingatha sesibini inokuphelisa ukuqokelelwa kwee-charges kwi-electrode, kwaye inkqubo yokukhupha ingaqhubeka ngokwesiqhelo.
2. Ii-electrode ezisebenzisa i-frequency ephezulu zenza i-self bias. Kwisixhobo se-RF esinesakhiwo se-electrode esithe tyaba, ii-electrode ezisebenzisa i-high-frequency kwisekethe zisebenzisa i-capacitive coupling matching zivelisa i-self bias voltage. Umahluko omkhulu phakathi kwesantya sokufuduka kwe-electron kunye nesantya sokufuduka kwe-ion ekukhutshweni kwenza ii-electron zifikelele kwisantya esikhulu sokuhamba ngexesha elithile, ngelixa isantya se-ion esicothayo sibangela ukuqokelelana. I-electrode esebenzisa i-frequency ephezulu ikwi-negative potential uninzi lomjikelo ngamnye, nto leyo ebangela i-voltage engalunganga kumhlaba, nto leyo eyenzeka ngenxa ye-self bias ye-electrode esebenzisa i-high-frequency.
I-self bias eveliswa yi-RF discharge electrode ikhawulezisa i-ion bombardment ye-cathode electrode ukuze ikhuphe rhoqo ii-electron zesibini ukugcina inkqubo yokukhupha, kwaye i-self bias idlala indima efanayo nokuhla kwe-cathode kwi-DC glow discharge. Nangona kusetyenziswa umbane we-RF, i-discharge ingazinza ngenxa ye-self bias voltage eveliswa yi-electrode ephezulu efikelela kwi-500-1000V.
3. Ukukhutshwa kwerediyo rhoqo kudlala indima ebalulekileyo ekukhutshweni koxinzelelo lomoya kunye nokukhutshwa kokukhanya kwe-dielectric barrier barrier okuye kwaziswa kamva.
Ixesha lokuthumela: Juni-21-2023