1.Kunenzuzo yokufafaza kanye ne-plating insulation film. Ushintsho olusheshayo ku-polarity ye-electrode lungasetshenziswa ukuphambanisa ngokuqondile okuhlosiwe kwe-insulating ukuze kutholwe amafilimu avikelayo. Uma umthombo wamandla we-DC usetshenziselwa ukufafaza nokufaka ifilimu yokufaka i-insulation, ifilimu yokufakelwa izovimba ama-ion aqondile ukuthi angangeni ku-cathode, enze isendlalelo sokuqongelela i-ion ephozithivu, ethambekele ekuqhekekeni nasekushiseni. Ngemva kokufaka ifilimu evikelayo ku-anode, ama-electron ayavinjwa ukuthi angangeni ku-anode, okuholela esimweni sokunyamalala kwe-anode. Uma usebenzisa umthombo wamandla we-RF ukuze umboze ifilimu yokuhlukanisa, ngenxa yokushintshashintsha kwe-polarity yama-electrode, amanani amahle aqoqwe ku-cathode engxenyeni yokuqala yomjikelezo azosuswa ama-electron engxenyeni yesibili yomjikelezo, futhi ama-electron anqwabelene ku-anode azosuswa ama-ion aqondile. Inqubo ephambene nomjikelezo wengxenye yesibili ingaqeda ukuqoqwa kwamacala ku-electrode, futhi inqubo yokukhipha ingaqhubeka ngokujwayelekile.
2.Ama-electrodes aphezulu enza ukuchema. Edivayisini ye-RF enesakhiwo se-electrode eyisicaba, ama-electrode ama-high-frequency kusekethe esebenzisa ukufaniswa kwe-capacitive coupling akhiqiza i-self bias voltage. Umehluko omkhulu phakathi kwejubane lokufuduka kwama-electron kanye nesivinini sokufuduka kwe-ion ekuphumeni kwenza ama-electron afinyelele isivinini esikhulu sokunyakaza ngesikhathi esinikeziwe, kuyilapho ijubane le-ion elihamba kancane libangela ukunqwabelana. I-electrode yefrikhwensi ephezulu inamandla angemahle ngobuningi bomjikelezo ngamunye, okuholela ku-voltage engalungile endaweni, okuwumkhuba wokuzicabangela wena we-electrode yamafrikhwensi aphezulu.
I-self bias ekhiqizwa i-RF discharge electrode isheshisa ukuqhuma kwe-ion kwe-cathode electrode ukuze ikhiphe ngokuqhubekayo ama-electron eSekondari ukuze kugcinwe inqubo yokukhipha, futhi ukuzicabangela kudlala indima efanayo nokwehla kwe-cathode ekuphumeni kokukhanya kwe-DC. Nakuba kusetshenziswa ukunikezwa kwamandla e-RF, ukukhishwa kungase kuzinze ngenxa ye-voltage yokuzicabangela yona ekhiqizwa i-electrode ephakeme kakhulu efinyelela ku-500-1000V.
3. Ukukhishwa kwefrikhwensi yomsakazo kudlala indima ebalulekile ekukhishweni kokukhanya komfutho womkhathi kanye nokukhishwa kokukhanya kwe-dielectric barrier glow okwethulwa kamuva.
Isikhathi sokuthumela: Jun-21-2023