I-Metal organic chemical vapor deposition (MOCVD), umthombo we-gaseous material yi-metal organic compound gas, futhi inqubo eyisisekelo yokusabela yokubeka iyafana ne-CVD.
1.MOCVD igesi eluhlaza
Umthombo wegesi osetshenziselwa i-MOCVD igesi yensimbi-organic compound (MOC). Izinhlanganisela ze-Metal-organic ziyizinhlanganisela ezizinzile ezikhiqizwa ngokuhlanganisa izinto eziphilayo nezinsimbi. Izinhlanganisela eziphilayo zine-alkyl, iphunga elimnandi. I-Alkyl ihlanganisa i-methyl, i-ethyl, i-propyl, ne-butyl. I-Alkyl ihlanganisa i-methyl, i-ethyl, i-propyl, ne-butyl. Iphunga elimnandi elihlanganisa i-phenyl homologues, trimethyl gallium, [Ga(CH3)3], i-trimethyl aluminium [Al(CH3)3] ngokufakwa kwama-microelectronics, optoelectronics, semiconductors kumakhompiyutha amathathu, amahlanu ongqimbeni lwefilimu, njenge-Ga(CH3)3 futhi i-ammonia ingaba ku-silicon wafer noma isafire ekukhuleni kwe-epitaxial kwamalambu e-LED kungqimba lwe-InGaN luminescent. Izibani ze-LED zingaphezu kwama-tungsten incandescent ezonga amandla angu-90%, ngaphezu kwama-60% amalambu e-fluorescent awonga amandla. Amalambu e-LED angonga ngo-90% ngaphezu kwamalambu e-tungsten incandescent kanye no-60% wonga amandla ngaphezu kwamalambu e-fluorescent. Namuhla, zonke izinhlobo zezibani zomgwaqo, izibani ezikhanyisayo nezibani zezimoto ngokuyisisekelo zisebenzisa amafilimu akhipha ukukhanya kwe-LED akhiqizwa yi-MOCVD.
2. Izinga lokushisa lokubeka
Izinga lokushisa lokubola lamakhemikhali e-organic metal liphansi, futhi izinga lokushisa lokubeka liphansi kunalelo le-HCVD. Izinga lokushisa lokubeka i-TiN elifakwe yi-MOCVD lingancishiswa libe cishe ku-500 degree.
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Isikhathi sokuthumela: Oct-20-2023