1, Iimpawu zokugquma nge-sputter
Xa kuthelekiswa ne-vacuum evaporation coating yesiqhelo, i-sputtering coating ineempawu ezilandelayo:
(1) Nasiphi na isithako sinokutshiza, ingakumbi indawo yokunyibilika ephezulu, izinto eziphantsi koxinzelelo lomphunga kunye neekhompawundi. Logama nje siqinile, nokuba sisinyithi, i-semiconductor, i-insulator, ikhompawundi kunye nomxube, njl.njl., nokuba sibhloko, izinto ezi-granular zingasetyenziswa njengezinto ekujoliswe kuzo. Ekubeni ukubola nokuqhekeka okuncinci kwenzeka xa kutshiza izinto zokugquma kunye nee-alloys ezifana nee-oxides, zinokusetyenziselwa ukulungiselela iifilimu ezincinci kunye neefilimu ze-alloy ezineenxalenye ezifanayo nezo zezixhobo ekujoliswe kuzo, kwaneefilimu eziqhuba kakhulu ezineekhompawundi ezintsonkothileyo. Ukongeza, indlela yokutshiza esabelayo ingasetyenziselwa ukuvelisa iifilimu zeekhompawundi ezahlukileyo ngokupheleleyo kwizinto ekujoliswe kuzo, njengee-oxides, ii-nitrides, ii-carbides kunye nee-silicides.
(2) Ukunamathelana okuhle phakathi kwefilimu etshizayo kunye ne-substrate. Ekubeni amandla ee-athomu ezitshizayo ephakame nge-1-2 orders yobukhulu kunalawo ee-athomu ezitshizayo, ukuguqulwa kwamandla ee-particles zamandla aphezulu ezifakwe kwi-substrate kuvelisa amandla aphezulu obushushu, nto leyo ephucula ukunamathelana kwee-athomu ezitshizayo kwi-substrate. Inxalenye yee-athomu ezitshizayo zamandla aphezulu iya kufakwa kwii-degrees ezahlukeneyo, yenze into ebizwa ngokuba yi-pseudo-diffusion layer kwi-substrate apho ii-athomu ezitshizayo kunye nee-athomu zezinto ze-substrate "zidibana" omnye komnye. Ukongeza, ngexesha lokuqhuma kwee-particles ezitshizayo, i-substrate ihlala icocwa kwaye ivuselelwa kwindawo ye-plasma, esusa ii-athomu ezitshizayo ezingabambekanga kakuhle, ihlambulule kwaye isebenze umphezulu we-substrate. Ngenxa yoko, ukunamathela kwe-flip layer kwi-substrate kuyaphucuka kakhulu.
(3) Uxinano olukhulu lwe-sputter coating, imingxuma emincinci, kunye nobunyulu obuphezulu be-film maleko kuba akukho ngcoliseko olunokubangelwa kukubola, into engenakuphepheka ekufakweni komphunga we-vacuum ngexesha lenkqubo ye-sputter coating.
(4) Ulawulo olufanelekileyo kunye nokuphindaphinda kobukhulu befilimu. Ekubeni umbane okhutshwayo kunye nomsinga ojoliswe kuwo zinokulawulwa ngokwahlukeneyo ngexesha lokufaka i-sputter, ubukhulu befilimu bunokulawulwa ngokulawula umsinga ojoliswe kuwo, ngaloo ndlela, ulawulo lobukhulu befilimu kunye nokuphindaphinda kobukhulu befilimu ngokufaka i-sputter ezininzi ze-sputter coating zilungile, kwaye ifilimu yobukhulu obumiselweyo inokufakwa ngokufanelekileyo. Ukongeza, i-sputter coating inokufumana ubukhulu befilimu obufanayo kwindawo enkulu. Nangona kunjalo, kwitekhnoloji yokufaka i-sputter ngokubanzi (ngokuyintloko i-dipole sputtering), izixhobo ziyinkimbinkimbi kwaye zifuna isixhobo soxinzelelo oluphezulu; isantya sokwenziwa kwefilimu sokufaka i-sputter siphantsi, izinga lokufaka i-vacuum evaporation yi-0.1 ~ 5nm/min, ngelixa izinga lokufaka i-sputtering liyi-0.01 ~ 0.5nm/min; ukunyuka kobushushu be-substrate kuphezulu kwaye kusengozini yegesi yokungcola, njl. Nangona kunjalo, ngenxa yophuhliso lwetekhnoloji yokufaka i-RF kunye ne-magnetron sputtering, kufunyenwe inkqubela phambili enkulu ekufezekiseni ukufakwa kwe-sputter ngokukhawuleza kunye nokunciphisa ubushushu be-substrate. Ngaphezu koko, kwiminyaka yakutshanje, iindlela ezintsha zokugquma i-sputter ziyaphandwa – ngokusekelwe kwi-planar magnetron sputtering – ukunciphisa uxinzelelo lomoya oluqhumayo kude kube yi-zero-pressure sputtering apho uxinzelelo lwegesi yokungenisa ngexesha lokuqhuma luya kuba yi-zero.
Ixesha lokuthumela: Novemba-08-2022