Ukusetyenziswa kokukhutshwa kweRF

I-1.Inzuzo yokutshiza kunye nefilimu yokufaka i-plating. Utshintsho olukhawulezayo kwi-electrode polarity ingasetyenziselwa ukutshiza ngokuthe ngqo iithagethi zokugquma ukuze ufumane iifilimu ezikhuselayo. Ukuba umthombo wamandla we-DC usetyenziselwa ukutshiza nokufaka ifilimu yokugquma, ifilim yokugquma iya kuvala ii-ion ezi-positive ukuba zingangeni kwi-cathode, zenze umaleko we-ion accumulation oncomekayo, othanda ukuqhekeka kunye nokuvutha. Emva kokufaka ifilimu ye-insulating kwi-anode, ii-electron zivaliwe ukuba zingangeni kwi-anode, okukhokelela kwisiganeko sokunyamalala kwe-anode. Xa usebenzisa umthombo wamandla we-RF ukwambathisa ifilimu yokugquma, ngenxa yokutshintshatshintsha kwe-polarity yee-electrode, iintlawulo ezilungileyo eziqokelelwe kwi-cathode kwisiqingatha sokuqala somjikelo ziya kuthatyathelwa i-elektroni kwisiqingatha sesibini somjikelo, kwaye i-electrons eziqokelelwe kwi-anode ziya kuthatyathelwa ecaleni ngee-ion ezintle. Inkqubo echaseneyo kumjikelezo wesiqingatha sesibini inokuphelisa ukuqokelelwa kweentlawulo kwi-electrode, kwaye inkqubo yokukhupha ingaqhubeka ngokuqhelekileyo.

2.Ii-electrode ezizihambelayo eziphezulu zivelisa i-self bias. Kwisixhobo se-RF esinolwakhiwo olusicaba lwe-electrode, ii-electrode ezikwi-high-frequency electrode kwisekethe zisebenzisa i-capacitive coupling matching zivelisa i-self bias voltage. Umahluko omkhulu phakathi kwesantya sokufuduka kwe-elektroni kunye nesantya sokufuduka kwe-ion ekukhupheni kwenza ukuba ii-electron zifezekise isantya esikhulu sentshukumo ngexesha elithile, ngelixa isantya esicothayo se-ion sibangela ukuqokelelana. I-electrode ye-high-frequency ikwikhono elibi kuninzi lomjikelo ngamnye, okukhokelela kwi-voltage engalunganga kumhlaba, nto leyo eyenzeka kwi-self bias ye-electrode ephezulu-frequency.

I-self bias eveliswa yi-RF discharge electrode ikhawulezisa i-ion bombardment ye-electrode ye-cathode ukuba ikhuphe ngokuqhubekayo ii-electron zeSekondari ukugcina inkqubo yokukhupha, kwaye i-self bias idlala indima efanayo nokuhla kwe-cathode ekukhutshweni kokukhanya kwe-DC. Nangona kusetyenziswa unikezelo lwamandla eRF, ukukhutshwa kunozinza ngenxa yombane we-self bias uveliswa yi-electrode ephezulu efikelela kwi-500-1000V.

3. Ukukhutshwa kwe-Radio frequency kudlala indima ebalulekileyo kwi-atmospheric pressure glow discharge kunye ne-dielectric barrier glow discharge eyaziswa kamva.