I-Metal organic chemical vapor deposition (MOCVD), umthombo wezinto zegesi yintsimbi ye-organic compound gas, kunye ne-basic reaction process of deposition iyafana ne-CVD.
1.MOCVD irhasi ekrwada
Umthombo wegesi osetyenziselwa i-MOCVD yi-metal-organic compound (MOC) igesi. Iikhompawundi ze-Metal-organic zikhompawundi ezizinzileyo eziveliswa ngokudibanisa izinto eziphilayo kunye neentsimbi. Iikhompawundi ze-Organic zinealkyl, zinevumba elimnandi. I-Alkyl ibandakanya i-methyl, i-ethyl, i-propyl, kunye ne-butyl. I-Alkyl ibandakanya i-methyl, i-ethyl, i-propyl, kunye ne-butyl. Ivumba elimnandi liquka phenyl homologues, trimethyl gallium, [Ga(CH3)3], i-aluminiyam ye-trimethyl [Al(CH3)3] ukwenzela ukubekwa kwe-microelectronics, i-optoelectronics, i-semiconductors kwi-3, i-compounds emihlanu kumaleko wefilimu, njenge-Ga (CH3)3 kunye ne-ammonia inokuba kwi-silicon wafer okanye isafire ekukhuleni kwe-epitaxial yezibane ze-LED kuluhlu lwe-luminescent ye-InGaN. Izibane ze-LED zingaphezulu kwe-tungsten incandescent-saving energy-90%, ngaphezu kwe-60% yezibane zokulondoloza amandla ezikhanyayo. Izibane ze-LED zine-90% zokonga amandla ngakumbi kunezibane ze-tungsten ze-incandescent kunye ne-60% yamandla angaphezulu kunezibane ze-fluorescent. Kule mihla, zonke iintlobo zezibane zesitrato, izibane zokukhanyisa kunye nezibane zemoto zisebenzisa ngokusisiseko iifilimu ezikhupha ukukhanya kwe-LED eziveliswe yi-MOCVD.
2. Ubushushu bokubeka
Iqondo lokushisa lokubola leekhompawundi zetsimbi ye-organic liphantsi, kwaye iqondo lokushisa lokubeka lingaphantsi kune-HCVD. Ubushushu be-deposit ye-TiN efakwe yi-MOCVD inokwehliswa malunga ne-500 degree.
–Eli nqaku likhutshwa nguumenzi womatshini wokugqumaGuangdong Zhenhua
Ixesha lokuposa: Oct-20-2023