(1) Ukugalela igesi. Irhasi yokutshiza kufuneka ibe neempawu zokuvunwa okuphezulu kwe-sputtering, i-inert kwizinto ezijoliswe kuyo, zingabizi, kulula ukufumana ubunyulu obuphezulu kunye nezinye iimpawu. Ngokuqhelekileyo, i-argon yeyona gesi ifanelekileyo yokutshiza.
(2) Umbane wokutshiza kunye ne-substrate yombane. Ezi parameters zimbini zinempembelelo ebalulekileyo kwiimpawu zefilimu, i-sputtering voltage ayichaphazeli kuphela izinga lokubeka, kodwa ichaphazela ngokunzulu isakhiwo sefilimu egciniweyo. I-substrate enokuthi ichaphazele ngokuthe ngqo ukuhamba kwe-electron okanye i-ion yenaliti yomntu. Ukuba i-substrate isekelwe, ibhobhozwa ngama-electron alinganayo; ukuba i-substrate inqunyanyisiwe, ikwindawo yokukhupha ukukhanya ukuze ifumane amandla angalunganga kancinane emhlabeni we-V1 enokuthi imiswe, kunye nokubanakho kweplasma ejikeleze i-substrate ye-V2 ibe phezulu kune-substrate enokubakho, eya kubangela iqondo elithile lokuqhushumba kwee-electron kunye nee-ion ezilungileyo, okukhokelela kwiinguqu kwezinye iimpawu ze-voltage, i-substrate ye-voltage, i-substrate ye-voltage isetyenziswa, i-substrate ye-voltage isetyenziswa. ihambelana ne-polarity yokwamkelwa kombane kwee-electron okanye i-ion, kungekhona nje ukuhlambulula i-substrate kunye nokuphucula ukunamathela kwefilimu, kodwa kwakhona ukuguqula isakhiwo sefilimu. Kwi-radio frequency sputtering coating, ukulungiswa kwe-membrane ye-conductor kunye ne-DC bias: ukulungiswa kwe-dielectric inwebu kunye ne-tuning bias.
(3) Ubushushu be-substrate. Ukushisa kwe-substrate kunempembelelo enkulu kuxinzelelo lwangaphakathi lwefilimu, olubangelwa ubushushu obuchaphazela ngokuthe ngqo umsebenzi wee-athomu ezifakwe kwi-substrate, ngaloo ndlela inquma ukubunjwa kwefilimu, isakhiwo, ubukhulu bengqolowa obuphakathi, i-crystal orientation kunye nokungapheleli.
–Eli nqaku likhutshwa nguumenzi womatshini wokugqumaGuangdong Zhenhua
Ixesha lokuposa: Jan-05-2024