Ion beam inobatsira kuisa uye yakaderera simba ion sosi

1.Ion danda rinobatsira dhizaini rinonyanya kushandisa yakaderera simba ion matanda kubatsira mukushandurwa kwepamusoro kwezvinhu.

(1) Hunhu hweion yakabatsira deposition

Munguva yekuputira, zvikamu zvemufirimu zvakaiswa zvinoramba zvichibhombwa nemaion anochajiwa kubva kune ion sosi iri pamusoro peiyo substrate ichiputirwa nechaji matanda eion.

(2) Basa reion rinobatsira kuisa

Maoni ane simba akakwirira anobhomba zvimedu zvemufirimu zvisina kusungwa chero nguva; Nekufambisa simba, zvimedu zvakaiswa zvinowana yakakura kinetic simba, nekudaro inovandudza mutemo we nucleation uye kukura; Gadzira compaction effect pane membrane tishu chero nguva, zvichiita kuti firimu ikure zvakanyanya; Kana reactive gas ions ikaiswa, stoichiometric compound layer inogona kuumbwa pamusoro pezvinhu, uye hapana kuwirirana pakati pekomboni layer uye substrate.

2. Ion sosi yeion danda yakabatsira deposition

Hunhu hweion beam inobatsira kuisa dhizaini ndeyekuti iyo firimu layer maatomu (deposition particles) anoramba achibhombwa neakaderera simba ion kubva kune ion sosi iri pamusoro peiyo substrate, zvichiita kuti chimiro chefirimu chiome zvakanyanya uye kuvandudza kushanda kweiyo firimu layer. Iyo simba E yeion beam ndeye ≤ 500eV. Anowanzo shandiswa ion masosi anosanganisira: Kauffman ion sosi, Hall ion sosi, anode layer ion sosi, hollow cathode Hall ion sosi, radio frequency ion sosi, nezvimwe.