Eqinisweni, ubuchwepheshe be-Ion beam bokusiza ubuchwephesha obuhlanganisiwe. Kuyindlela yokwelapha ye-ion engaphezulu ehlanganisa ukufakwa kwe-ion kanye nobuchwepheshe befilimu bokufakwa komhwamuko, kanye nohlobo olusha lwesu le-ion beam surface optimization. Ngaphezu kwezinzuzo zokubeka umhwamuko obonakalayo, le nqubo ingaqhubeka ikhulisa noma iyiphi ifilimu ewugqinsi ngaphansi kwezimo eziqinile zokulawula, ithuthukise ukucwebezela nokuma kwesendlalelo sefilimu ngokuphawulekayo, ikhulise amandla okunamathela ongqimba lwefilimu, ithuthukise ukuminyene kwesendlalelo sefilimu, futhi ihlanganise amafilimu ayinhlanganisela anezilinganiso ezifanele ze-stoichiometric endaweni eseduze nezinga lokushisa eliseduze negumbi, okuhlanganisa nezinhlobo ezintsha zokushisa ezitholakala ekamelweni, kuhlanganise nezinhlobo ezintsha zokushisa. I-ion beam assisted deposition ayigcini nje ngokugcina izinzuzo zenqubo yokufakelwa kwe-ion, kodwa futhi ingamboza i-substrate ngefilimu ehluke ngokuphelele ku-substrate.
Kuzo zonke izinhlobo zokubeka umhwamuko obonakalayo kanye nokufakwa komhwamuko wamakhemikhali, isethi yezibhamu ezisizayo eziqhunyiswa ngamabhomu zingangezwa ukwenza uhlelo lwe-IBAD, futhi kunezinqubo ezimbili ezijwayelekile ze-IBAD njengokulandelayo, njengoba kukhonjisiwe ku-Pic:

Njengoba kubonisiwe ku-Pic (a), umthombo wokuhwamuka kwe-electron beam usetshenziselwa ukukhanyisela isendlalelo sefilimu ngothango lwe-ion olukhishwa kusibhamu se-ion, ngaleyo ndlela kuqashelwe ukubekwa kokusiza kwe-ion. Inzuzo ukuthi amandla e-ion beam kanye nesiqondiso kungashintshwa, kodwa i-alloy eyodwa noma elinganiselwe kuphela, noma i-compound ingasetshenziswa njengomthombo wokuhwamuka, futhi ukucindezela ngakunye kwe-vapor kwengxenye ye-alloy kanye nenhlanganisela kuhlukile, okwenza kube nzima ukuthola ungqimba lwefilimu lokwakheka komthombo wokuqala wokuhwamuka.
Isithombe (b) sibonisa i-ion beam sputtering-assisted deposition, eyaziwa nangokuthi i-double ion beam sputtering deposition, lapho okuqondiwe okwenziwe ngezinto zokumboza zokufafaza kwe-ion, imikhiqizo yokufafaza isetshenziswa njengomthombo. Ngenkathi uyifaka ku-substrate, ukufakwa kwe-ion beam sputtering kufinyelelwa ngokufaka imisebe ngomunye umthombo we-ion. Inzuzo yale ndlela ukuthi izinhlayiya ezihlutshiwe ngokwazo zinamandla athile, ngakho-ke kukhona ukunamathela okungcono ne-substrate; noma iyiphi ingxenye yethagethi ingaba yi-sputtered coating, kodwa futhi kungaba ukusabela okuphafuza efilimini, kulula ukulungisa ukwakheka kwefilimu, kodwa ukusebenza kahle kokubekwa kwayo kuphansi, okuhlosiwe kuyabiza futhi kunezinkinga ezifana nokuphalaza okukhethekile.
Isikhathi sokuthumela: Nov-08-2022
