Enyanisweni, iteknoloji yokufakwa kwe-ion beam assisted deposition yiteknoloji edibeneyo. Yindlela yonyango lwe-ion surface edibeneyo edibanisa i-ion implantation kunye neteknoloji yefilimu yokufakwa kwe-vapor physical, kunye nohlobo olutsha lwendlela yokwenza ngcono umphezulu we-ion beam. Ukongeza kwiingenelo zokufakwa kwe-vapor physical, le ndlela inokukhulisa ngokuqhubekayo nayiphi na ifilimu yobukhulu phantsi kweemeko zolawulo olungqongqo, iphucule ubukrelekrele kunye nolwalathiso lwefilimu ngakumbi, yonyuse amandla okunamathela kwefilimu/substrate, iphucule uxinano lwefilimu, kwaye idibanise iifilimu ezidityanisiweyo ezinemilinganiselo efanelekileyo ye-stoichiometric kubushushu begumbi, kubandakanya iintlobo ezintsha zeefilimu ezingenakufunyanwa kubushushu begumbi kunye noxinzelelo. Ukufakwa kwe-ion beam assisted deposition akugcini nje ngokugcina iingenelo zenkqubo yokufakwa kwe-ion, kodwa inokugubungela i-substrate ngefilimu eyahlukileyo ngokupheleleyo kwi-substrate.
Kuzo zonke iintlobo zokufakwa komphunga ngokwasemzimbeni kunye nokufakwa komphunga weekhemikhali, iseti yee-ion guns ezincedisayo zingongezwa ukwenza inkqubo ye-IBAD, kwaye kukho iinkqubo ezimbini ze-IBAD ngokubanzi ngolu hlobo lulandelayo, njengoko kubonisiwe kwiPic:
Njengoko kubonisiwe kwiPic (a), umthombo womphunga we-electron beam usetyenziselwa ukukhanyisela umaleko wefilimu ngomphunga we-ion ophuma kwisibhamu se-ion, ngaloo ndlela kufezekiswa ukubekwa kwe-ion beam. Inzuzo kukuba amandla kunye necala le-ion beam zinokulungiswa, kodwa kuphela i-alloy enye okanye encinci, okanye i-compound enokusetyenziswa njengomthombo womphunga, kwaye uxinzelelo ngalunye lomphunga lwecandelo le-alloy kunye ne-compound lwahlukile, nto leyo eyenza kube nzima ukufumana umaleko wefilimu wolwakhiwo lomthombo womphunga wokuqala.
Umfanekiso (b) ubonisa i-ion beam sputtering-assisted deposition, eyaziwa ngokuba yi-double ion beam sputtering deposition, apho ithagethi yenziwe ngezinto zokugquma i-ion beam sputtering, iimveliso zokugquma zisetyenziswa njengomthombo. Ngelixa ifakwa kwi-substrate, i-ion beam sputtering assisted deposition ifezekiswa ngokukhanyiswa ngomthombo we-ion. Inzuzo yale ndlela kukuba amasuntswana aqhumayo ngokwawo anamandla athile, ngoko ke kukho ukunamathela okungcono kwi-substrate; naliphi na icandelo lethagethi linokuba yi-sputtered coating, kodwa linokuba yi-reaction sputtering kwifilimu, kulula ukulungisa ukwakheka kwefilimu, kodwa ukusebenza kwayo kwe-deposition kuphantsi, ithagethi ibiza kakhulu kwaye kukho iingxaki ezifana ne-selective sputtering.
Ixesha lokuthumela: Novemba-08-2022