I-ion beam incedise itekhnoloji yokubeka

Ngapha koko, itekhnoloji ye-Ion encedisiweyo yitekhnoloji edibeneyo. Bubuchule obudibeneyo bonyango lwe-ion obuphezulu obudibanisa ukufakelwa kwe-ion kunye netekhnoloji yefilimu yokubeka umphunga womzimba, kunye nohlobo olutsha lwe-ion beam surface optimization technique. Ukongeza kwiingenelo zokubeka umphunga womzimba, obu buchule bunokukhula ngokuqhubekayo nayiphi na ifilimu engqingqwa phantsi kweemeko ezingqongqo zokulawula, ukuphucula icrystallinity kunye nokuqhelaniswa nomgangatho wefilimu ngakumbi, ukonyusa amandla okunamathela kungqimba lwefilimu / i-substrate, ukuphucula ukuxinana komgangatho wefilimu, kunye nokudibanisa iifilimu ezihlanganisiweyo ezinemilinganiselo efanelekileyo ye-stoichiometric kwiqondo lokushisa elikufutshane negumbi, kubandakanywa neentlobo zoxinzelelo olutsha. I-ion beam incedise i-deposition ayigcini nje kuphela izibonelelo zenkqubo yokufakelwa kwe-ion, kodwa inokugubungela i-substrate ngefilimu ehluke ngokupheleleyo kwi-substrate.
Kuzo zonke iintlobo zokubekwa komphunga womzimba kunye nokubekwa komphunga wekhemikhali, iseti yezixhobo ezincedisayo zebhombardment ion guns zingongezwa ukwenza inkqubo ye-IBAD, kwaye kukho iinkqubo ezimbini ze-IBAD ngokubanzi ngolu hlobo lulandelayo, njengoko kubonisiwe kwiPic:

Njengoko kubonisiwe kwi-Pic (a), umthombo we-electron beam evaporation usetyenziselwa ukukhupha umaleko wefilimu kunye ne-ion beam ekhutshwe kwi-ion gun, ngaloo ndlela iqonda i-ion beam encediswayo yokubeka. Inzuzo kukuba i-ion beam yamandla kunye nolwalathiso lunokulungelelaniswa, kodwa kuphela i-alloy enye okanye encinci, okanye i-compound ingasetyenziswa njengomthombo wokuguquka, kwaye uxinzelelo lomphunga ngamnye wecandelo le-alloy kunye nekhompawundi yahlukile, eyenza kube nzima ukufumana umaleko wefilimu yokwakheka komthombo wokuqala wokufudumala.
I-Pic (b) ibonisa i-ion beam sputtering-assisted deposition, ekwaziwa ngokuba yi-double ion beam beam sputtering deposition, apho ithagethi yenziwe nge-ion beam sputtering impahla yokugquma, iimveliso zokutshiza zisetyenziswa njengomthombo. Ngelixa uyifaka kwi-substrate, i-ion beam sputtering incediswa i-deposition ifezekiswa ngokukhanya kunye nomnye umthombo we-ion. Inzuzo yale ndlela kukuba iinqununu ezitshisiweyo ngokwazo zinamandla athile, ngoko ke kukho ukunamathela okungcono kunye ne-substrate; naliphi na icandelo ekujoliswe kulo linokuba sputtered ukutyabeka, kodwa kwakhona inokuba reaction sputtering kwi ifilimu, kulula ukunyenyisa ukubunjwa ifilimu, kodwa ukubekwa esebenzayo yayo iphantsi, ekujoliswe kuyo kuyabiza kwaye kukho iingxaki ezifana sputtering ekhethiweyo.