1. Ubuchwepheshe bokufaka i-ion beam assisted beam bubonakala ngokunamathela okuqinile phakathi kwe-membrane kanye ne-substrate, ungqimba lwe-membrane luqinile kakhulu. Ukuhlolwa kubonisa ukuthi: ukufakwa kwe-ion beam assisted beam of adhesion kunokunamathela kwe-thermal vapor deposition kwanda izikhathi eziningana kuya emakhulwini ezikhathi, isizathu sibangelwa kakhulu yi-ion bombardment ebusweni bomphumela wokuhlanza, ukuze i-interface yesisekelo se-membrane yakha isakhiwo se-gradient interfacial, noma ungqimba lokuguquguquka oluhlanganisiwe, kanye nokunciphisa ukucindezeleka kwe-membrane.
2. Ukufakwa kwe-ion beam okusizwa yi-ion kungathuthukisa izakhiwo zemishini zefilimu, kwandise impilo yokukhathala, kufaneleka kakhulu ekulungiseleleni ama-oxide, ama-carbide, i-cubic BN, i-TiB2, kanye nezingubo ezifana nedayimane. Isibonelo, ku-1Cr18Ni9Ti insimbi engangenisi ukushisa ekusetshenzisweni kobuchwepheshe bokufakwa kwe-ion-beam-assisted ukuze kukhule ifilimu ye-200nm Si3N4, hhayi nje kuphela okungavimbela ukuvela kwemifantu yokukhathala ebusweni bezinto ezibonakalayo, kodwa futhi kunciphisa kakhulu izinga lokusabalala kwemifantu yokukhathala, ukwandisa impilo yayo inendima enhle.
3. Ukufakwa kwe-ion beam okusizwa yi-ion kungashintsha uhlobo lokucindezeleka kwefilimu kanye noshintsho lwesakhiwo sayo sekristalu. Isibonelo, ukulungiswa kwefilimu ye-Cr ene-11.5keV Xe + noma i-Ar + ukuqhunyiswa kwe-substrate surface, kutholakale ukuthi ukulungiswa kokushisa kwe-substrate, amandla e-ion okuqhunyiswa yi-bombardment, ama-ion nama-athomu ukuze kufinyelelwe isilinganiso samapharamitha, kungenza ukucindezeleka kusukela ekucindezelweni kokucindezela kuya ekucindezelweni okucindezelwayo, isakhiwo sekristalu sefilimu sizophinde sikhiqize izinguquko. Ngaphansi kwesilinganiso esithile sokufika kwe-ion-to-atom, ukufakwa kwe-ion beam okusizwa yi-ion kunokuqondisa okungcono kokukhetha kunesendlalelo se-membrane esifakwe yi-thermal vapor deposition.
4. Ukufakwa kwe-ion beam okusizwa yi-ion kungathuthukisa ukumelana nokugqwala kanye nokumelana nokugqwala kwe-membrane. Ngenxa yobuningi bokufakwa kwe-ion beam-assisted kwesendlalelo sefilimu, ukuthuthukiswa kwesakhiwo se-interface yesisekelo sefilimu noma ukwakheka kwesimo esingaguquki okubangelwa ukunyamalala kwemingcele yokusanhlamvu phakathi kwezinhlayiya, okusiza ekuthuthukiseni ukumelana nokugqwala kwezinto futhi kumelane nokugqwala kokushisa okuphezulu.
5. Ukufakwa kwe-ion beam okusizwa ukubekwa kungashintsha izakhiwo ze-electromagnetic zefilimu futhi kuthuthukise ukusebenza kwamafilimu amancane abonakalayo.
6. Ukufakwa kwe-ion okusiza nge-ion kuvumela ukulungiswa okunembile nokuzimele kwamapharamitha ahlobene nokufakwa kwe-athomu kanye nokufakelwa kwe-ion, futhi kuvumela ukukhiqizwa okulandelanayo kokumbozwa kwama-micrometer ambalwa anokwakheka okufanayo ngamandla aphansi okuqhumisa, ukuze amafilimu ahlukahlukene amancane angakhuliswa ekushiseni kwegumbi, kugwenywe imiphumela emibi ezintweni noma ezingxenyeni ezinembile ezingase zibangelwe ukuzelapha emazingeni okushisa aphezulu.
–Lesi sihloko sikhishwe yi-umenzi womshini wokumboza nge-vacuumI-Guangdong Zhenhua
Isikhathi sokuthunyelwe: Jan-24-2024