1. Iteknoloji yokufakwa kwe-ion beam encediswa yi-ion beam ibonakaliswa kukunamathelana okunamandla phakathi kwe-membrane kunye ne-substrate, umaleko we-membrane unamandla kakhulu. Uvavanyo lubonisa ukuba: ukunamathela kwe-ion beam-assisted beam of adhesion kunokuba ukunamathela kwe-thermal vapor deposition kwanda amaxesha amaninzi ukuya kumakhulu amaxesha, isizathu sibangelwa ikakhulu yi-ion bombardment kumphezulu wesiphumo sokucoca, ukuze i-interface yesiseko se-membrane ibe yi-gradient interfacial structure, okanye umaleko we-hybrid transition, kunye nokunciphisa uxinzelelo lwe-membrane.
2. Ukufakwa kwe-ion beam encediswayo kunokuphucula iimpawu zoomatshini zefilimu, kwandise ubomi bokudinwa, kulungele kakhulu ukulungiswa kwee-oxides, ii-carbides, ii-cubic BN, ii-TiB2, kunye neengubo ezifana nedayimani. Umzekelo, kwi-1Cr18Ni9Ti intsimbi engatshisi ubushushu ekusebenziseni iteknoloji yokufakwa kwe-ion-beam-assisted ukukhulisa ifilimu ye-200nm Si3N4, ayinakuthintela kuphela ukuvela kwee-cracks zokudinwa kumphezulu wezinto, kodwa ikwanciphisa kakhulu izinga lokusasazwa kwee-cracks zokudinwa, ukwandisa ubomi bayo inendima elungileyo.
3. Ukufakwa kwe-ion beam assisted deposition kunokutshintsha uhlobo loxinzelelo lwefilimu kunye notshintsho kwisakhiwo sayo sekristale. Umzekelo, ukulungiswa kwefilimu yeCr ene-11.5keV Xe + okanye i-Ar + bombardment yomphezulu we-substrate, kwafunyaniswa ukuba ukulungiswa kobushushu be-substrate, amandla e-ion bombardment, ii-ion kunye neeathom ukufikelela kumlinganiselo weeparameter, kunokwenza uxinzelelo ukusuka kuxinzelelo lokuxinana ukuya kuxinzelelo lokucinezelwa, isakhiwo sekristale sefilimu siya kuvelisa utshintsho. Phantsi komlinganiselo othile wokufika kwe-ion-to-atom, ukufakwa kwe-ion beam assisted deposition kunokhetho olungcono kunomaleko we-membrane obekwe yi-thermal vapor deposition.
4. Ukufakwa kwe-ion beam encediswa kukubekwa kwe-ion kunokunyusa ukumelana nokugqwala kunye nokumelana nokugqwala kwe-membrane. Ngenxa yobuninzi bokufakwa kwe-ion beam-assisted kwi-film layer, ukuphuculwa kwesakhiwo se-interface yesiseko sefilimu okanye ukwakheka kwe-amorphous state okubangelwa kukuphela kwemida yeenkozo phakathi kwamasuntswana, okunceda ekuphuculeni ukumelana nokugqwala kwezinto kunye nokumelana nokugqwala kobushushu obuphezulu.
5. Ukufakwa kwe-ion beam assisted deposition kunokutshintsha iipropati ze-electromagnetic zefilimu kwaye kuphucule ukusebenza kweefilimu ezincinci ze-optical.
6. Ukufakwa kwe-ion-assisted ion kuvumela uhlengahlengiso oluchanekileyo noluzimeleyo lweeparameter ezinxulumene nokufakwa kwe-athomu kunye nokufakelwa kwe-ion, kwaye kuvumela ukuveliswa ngokulandelelana kweengubo ze-micrometer ezimbalwa ezinokwakheka okufanayo kumandla aphantsi okuqhushumba, ukuze iifilimu ezahlukeneyo ezincinci zikhule kubushushu begumbi, kuthintelwe imiphumo emibi kwizinto okanye kwiindawo ezichanekileyo ezinokubangelwa kukuzinyanga kubushushu obuphezulu.
–Eli nqaku likhutshwe nguumenzi womatshini wokugquma nge-vacuumGuangdong Zhenhua
Ixesha leposi: Jan-24-2024