1. Ubuchwepheshe be-Ion beam bosizo lokubeka bubonakala ngokunamathela okuqinile phakathi kwe-membrane ne-substrate, ungqimba lwe-membrane luqine kakhulu. Ukuhlola kubonisa ukuthi: ukunamatheliswa kwe-ion beam-assisted deposition kunokunamathela kokumiswa komhwamuko oshisayo kukhuphuke izikhathi eziningana ukuya emakhulwini ezikhathi, isizathu sibangelwa ikakhulukazi ukuqhuma kwe-ion ebusweni bomphumela wokuhlanza, ukuze isixhumi esibonakalayo sesisekelo se-membrane senze ukwakheka kwe-gradient interfacial, noma ungqimba olushintshayo lwenguquko, kanye nokunciphisa ulwelwesi lwengcindezi.
2. Ukufakwa kwe-ion beam kungathuthukisa izici zemishini zefilimu, kunwebe impilo yokukhathala, kulungele kakhulu ukulungiswa kwama-oxides, ama-carbides, i-cubic BN, i-TiB2, nezingubo ezifana nedayimane. Isibonelo, ku-1Cr18Ni9Ti insimbi ekwazi ukumelana nokushisa ekusetshenzisweni kobuchwepheshe bokufakwa kwe-ion-beam-assisted deposition ukuze kukhule ifilimu ye-200nm Si3N4, ngeke nje ivimbele ukuvela kwemifantu yokukhathala ebusweni bezinto ezibonakalayo, kodwa futhi inciphisa kakhulu izinga lokusabalalisa ukukhathala kwe-crack, ukunweba impilo yayo kunendima enhle.
3. Ukufakwa kwe-ion beam kusizwa kungashintsha imvelo yokucindezeleka yefilimu kanye nesakhiwo sayo sekristalu siyashintsha. Isibonelo, ukulungiswa kwefilimu ye-Cr ene-11.5keV Xe + noma i-Ar + bombardment yendawo engaphansi, ithole ukuthi ukulungiswa kwezinga lokushisa elingaphansi kwe-substrate, amandla e-bhomu ye-ion, ama-ion nama-athomu ukuze kufinyelele isilinganiso samapharamitha, kungenza ingcindezi isuke ekucindezelekeni iye ekucindezelekeni okucindezelayo, ukwakheka kwecrystalline kwefilimu nakho kuzoveza izinguquko. Ngaphansi kwesilinganiso esithile sokufika kwe-ion-to-athomu, ukubekwa okusizwa kwe-ion kwe-ion kunomumo okhethayo ongcono kunesendlalelo selwelwesi elidiphozithwe wukufakwa komhwamuko oshisayo.
I-4.Ion isizwa ugongolo ingathuthukisa ukumelana nokugqwala kanye nokumelana ne-oxidation ye-membrane. Ngenxa yokuminyana kohlaka lwe-ion olusiza ungqimba lwefilimu, ukuthuthukiswa kwesakhiwo sesizinda sefilimu ukuthuthukiswa noma ukwakheka kwesimo se-amorphous okubangelwa ukunyamalala kwemingcele yokusanhlamvu phakathi kwezinhlayiya, okusiza ekuthuthukiseni ukumelana nokugqwala kwento futhi imelana ne-oxidation yokushisa okuphezulu.
5. Ukufakwa kwe-ion beam kusizwa kungashintsha izici ze-electromagnetic zefilimu futhi kuthuthukise ukusebenza kwamafilimu amancane abonakalayo.
6. Ukufakwa okusizwa nge-ion kuvumela ukulungiswa okunembile nokuzimele kwemingcele ehlobene nokufakwa kwe-athomu nokufakwa kwe-ion, futhi kuvumela ukukhiqizwa okulandelanayo kwama-micrometer ambalwa ngokwakheka okungaguquguquki emandleni aphansi ebhomu, ukuze amafilimu ahlukahlukene azacile akhuliswe ekamelweni lokushisa, kugwenywe imiphumela emibi ezintweni noma izingxenye zokushisa eziphakeme ezingase zibangelwe ukwelapha okunembayo kwazo.
-Le ndatshana ikhishwe nguumenzi womshini we-vacuum coatingI-Guangdong Zhenhua
Isikhathi sokuthumela: Jan-24-2024