I-Ion Beam iNcedisa iTekhnoloji yokuBeka

1. I-Ion beam incedise iteknoloji yokubeka ibonakaliswe ngokubambelela ngokuqinileyo phakathi kwe-membrane kunye ne-substrate, i-membrane layer yomelele kakhulu. Iimvavanyo zibonisa ukuba: i-ion beam-assisted deposition of adhesion kunokuba i-adhesion of thermal vapour deposition inyuke kaninzi ukuya kumakhulu amaxesha, isizathu sibangelwa ikakhulu kwi-ion bombardment kumphezulu wesiphumo sokucoca, ukwenzela ukuba ujongano lwesiseko se-membrane ukwenza i-gradient interfacial structure, okanye i-hybrid transition layer, kunye nokunciphisa uxinzelelo lwe-membrane.

2. I-Ion beam incedise i-deposition inokuphucula iimpawu ze-mechanical zefilimu, zandise ubomi bokukhathala, zifaneleke kakhulu ukulungiswa kwee-oxides, i-carbides, i-cubic BN, i-TiB2, kunye neengubo ezinjenge-diamond. Ngokomzekelo, kwi-1Cr18Ni9Ti insimbi ekwazi ukumelana nobushushu ekusebenziseni i-ion-beam-assisted deposition technology ukuze ikhule ifilimu ye-200nm Si3N4, ayinakunqanda kuphela ukuvela kweentanda zokudinwa kumphezulu wezinto eziphathekayo, kodwa inciphisa kakhulu izinga lokudinwa kwe-crack diffusion, ukwandisa ubomi bayo kunendima enhle.

3. I-ion beam incedise i-deposition inokutshintsha uhlobo loxinzelelo lwefilimu kunye ne-crystalline structure change. Umzekelo, ukulungiswa kwefilimu ye-Cr kunye ne-11.5keV Xe + okanye i-Ar + bombardment ye-substrate surface, yafumanisa ukuba ukulungiswa kobushushu be-substrate, ibhobhobhobho ye-ion amandla, i-ion kunye ne-athomu ukufikelela kumlinganiselo weeparamitha, kunokwenza uxinzelelo olusuka kuxinzelelo lwe-tensile ukuya kuxinzelelo olucinezelayo, i-crystalline structure yefilimu nayo iya kuvelisa utshintsho. Ngaphantsi komlinganiselo othile wokufika kwe-ion ukuya kwi-athom, i-ion beam encediswayo yokubeka inokhetho olungcono olukhethayo kunomaleko we-membrane ofakwe ngokubekwa komphunga oshushu.

I-4.Ion beam encediswayo yokufaka i-deposition inokunyusa ukuxhathisa ukubola kunye nokumelana ne-oxidation ye-membrane. Ngenxa yoxinaniso lwe-ion beam-assisted deposition of the film layer, isiseko sefilimu ukuphuculwa kwesakhiwo sojongano okanye ukubunjwa kwemeko ye-amorphous ebangelwa ukunyamalala kwemida yeenkozo phakathi kwamasuntswana, okulungelelaniswa nokwandiswa kokumelana nokubola kwezinto kunye nokuxhathisa i-oxidation yobushushu obuphezulu.

5. I-ion beam encedisiweyo yokufaka i-deposition inokutshintsha iimpawu ze-electromagnetic zefilimu kwaye iphucule ukusebenza kweefilimu ezincinci ezibonakalayo.

6. I-ion-assisted deposition ivumela ukulungiswa okuchanekileyo kunye nokuzimela ngokuzimeleyo kweeparameters ezinxulumene nokubekwa kwe-athomu kunye nokufakelwa kwe-ion, kwaye ivumela isizukulwana esilandelayo sokugquma kwee-micrometers ezimbalwa kunye nokubunjwa okuhambelanayo kumandla aphantsi e-bombardment, ukwenzela ukuba iifilimu ezinqabileyo ezihlukeneyo zingakhuliswa kwiqondo lokushisa, ukuphepha imiphumo emibi kwizinto eziphathekayo okanye iindawo zokushisa ezinokuthi zibangelwa ukuchaneka kweendawo zokushisa ezinokuthi zibangelwa ukuchaneka kwazo.

–Eli nqaku likhutshwa nguumenzi womatshini wokugqumaGuangdong Zhenhua